Kang Chang | Sematech
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概要
関連著者
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Kang Chang
Sematech
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SONG Seung-Chul
SEMATECH
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CHOI Rino
SEMATECH
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Lee Byoung
Sematech
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Lee Hi-Deok
Dept. of Electronics Engineering, Chungnam National University
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Lee Hi-deok
Dept. Of Electronics Engineering Chungnam National Univ.
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Lee Byoung
Sematech Tx Usa
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Jammy Raj
Sematech
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Quevedo-lopez Manuel
Texas Instruments Assignee
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HUSSAIN Muhammad
SEMATECH
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ALSHAREEF Husam
Texas Instruments Assignee
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SASSMAN Barry
SEMATECH
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LEE Byoung
IBM Assignee
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Jeong Yoon-Ha
Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology
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SUGAWARA Takuya
Tokyo Electron Ltd.
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Jeong Yoon-ha
Dept. Of Electronic And Electrical Engineering Pohang University Of Science And Technology
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Jeong Yoon-ha
Dept. Of Electronic And Electrical Engineering Pohang University Of Science And Technology (postech)
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LEE Kyong
Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH
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SONG Seung
SEMATECH
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Majhi Prashant
Sematech
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Akasaka Yasushi
Tokyo Electron Ltd.
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OH Jungwoo
SEMATECH
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Lee Kyong
Dept. Of Electronic And Electrical Engineering Pohang University Of Science And Technology (postech)
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Kang Chang
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.
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Joe Raymond
Tokyo Electron America Inc., 2400 Grove Blvd., Austin, TX 78741, U.S.A.
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Kaitsuka Takanobu
Tokyo Electron Ltd., Akasaka Biz Tower, 3-1 Akasaka 5-chome, Minato-ku, Tokyo 107-6325, Japan
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Arikado Tsunetoshi
Tokyo Electron Ltd., Akasaka Biz Tower, 3-1 Akasaka 5-chome, Minato-ku, Tokyo 107-6325, Japan
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Tomoyasu Masayuki
Tokyo Electron Ltd., Akasaka Biz Tower, 3-1 Akasaka 5-chome, Minato-ku, Tokyo 107-6325, Japan
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Akasaka Yasushi
Tokyo Electron Ltd., Akasaka Biz Tower, 3-1 Akasaka 5-chome, Minato-ku, Tokyo 107-6325, Japan
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Sugawara Takuya
Tokyo Electron AT Ltd., Technology Development Center, 650, Hosaka-cho Mitsuzawa, Nirasaki, Yamanashi 407-0192, Japan
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Oh Jungwoo
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.
著作論文
- Compatibility of ALD Hafnium Silicate with Dual Metal Gate CMOS Integration
- Effects of O_2 Plasma Treatment on the Reliabilities of Metal Gate/High-k Dielectric MOSFETs
- High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2 High-$k$ Dielectric and Metal Gate