Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si MOS Capacitors and Field Effect Transistors

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• Jammy Raj

  Sematech

• Tseng Hsing-huang

  Sematech

• Lee Se-hoon

  University Of Texas At Austin

• Harris Rusty

  Sematech

• Majhi Prashant

  Sematech

• Banerjee Sanjay

  University Of Texas At Austin

• Kalra Pankaj

  University Of California At Berkeley

• OH Jungwoo

  SEMATECH

• LEE Hideok

  University of Texas at Austin

関連論文

• Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si MOS Capacitors and Field Effect Transistors
• High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2 High-$k$ Dielectric and Metal Gate
• Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide
• High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility
• Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si Metal–Oxide–Semiconductor Capacitors and Field Effect Transistors
• Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal-Oxide-Semiconductor Field Effect Transistors (Special Issue : Solid State Devices and Materials (1))
• Negative Bias Temperature Instability Dependence on Dielectric Thickness and Nitrogen Concentration in Ultra-scaled HfSiON Dielectric/TiN Gate Stacks

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