KWON Hyuk-Min | Department of Electronics Engineering, Chungnam National University

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著作論文

Conduction Mechanism and Reliability Characteristics of a Metal--Insulator--Metal Capacitor with Single ZrO2 Layer
Effect of nitrogen concentration on low-frequency noise and negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with nitrided gate oxide (Special issue: Dielectric thin films for future electron devices: s
Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal-Oxide-Semiconductor Field Effect Transistors (Special Issue : Solid State Devices and Materials (1))
Extraction of Energy Distribution of Nitride Traps Using Charge Pumping Method in Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory
Erratum: ``Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2''
Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2
Dependence of Hot Carrier Reliability and Low Frequency Noise on Channel Stress in Nanoscale n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors
Novel PNP BJT Structure to Improve Matching Characteristics for Analog and Mixed Signal Integrated Circuit Applications

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