P and As Implantation Enhanced Formation of Metal-Free Oxide on WSi2

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概要

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• We investigated the oxidation of crystallized tungsten silicide. We also researched the effects of preimplantation by P (or As) on the oxidation. Our results showed that the oxidation involved decomposition of the tungsten disilicide and consumption of the underlying polycrystalline silicon (polysilicon), consequently causing serious reliability problems. Cross-sectional transmission electron microscopy (XTEM) analysis showed that the oxide consisted of crystalline WO3 and amorphous SiO2, which was not removed completely using chemical solutions such as 100:1 HF and 7:1 buffered oxide etchant (BOE). However, P (or As) implantation prior to oxidation produced a SiO2 layer free of tungsten oxide. In particular, phosphorous implantation into silicide yielded a much thinner SiO2 layer on the silicide than As, which might be attributed to the presence of P2O5 in the oxide.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1997-12-15

著者

• Roh Jae-sung

  Lg Semicon Co. Ltd.

• Lee Jae-gab

  Department Of Metallurgical Engineering Kookmin University

• Lee Jeong-yong

  Department Of Electronic Materials And Engineering Kaist

• Kim Ji-young

  Department Of Environmental Engineering Kumoh National Institute Of Technology

• HUH Jeung-Soo

  Department of Materials Science and Metallurgy, Kyungpook National University

• Roh Jae-Sung

  LG Semicon Co., Ltd., 50, Hyangjeong-dong, Chengiu 360-480, Korea

• Lee Jae-Gab

  Department of Metallurgical Engineering, Kookmin University, 861-1, Joengneng-dong, Sungbuk-gu, Seoul 136-702, Korea

• Huh Jeung-Soo

  Department of Metallurgical Engineering, Kyungpook National University,

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