Analysis of Transfer Gate in CMOS Image Sensor(Session 6A : TFTs and Sensors)

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概要

• 論文の詳細を見る

• Dark current is one of the key parameters for image quality in CMOS image sensor(CIS). Transfer device structure is modified in this paper to reduce the dark current of high density and high performance CMOS image sensor. It is shown that dark current is reduced a lot by the proposed structure. It is also shown that there is little change of device performance as well as less device degradation under hot carrier compared with the reference structure. It is believed that the improvement of dark current is due to the local increase of threshold voltage.

• 2010-06-23

著者

• Park Seong-Hyung

  Dept. of Electronics Engineering, Chungnam National University

• Kwon Hyuk-Min

  Dept. of Electronics Engineering, Chungnam National University

• Bok Jung-Deuk

  Dept. of Electronics Engineering, Chungnam National University

• Han In-Shik

  Dept. of Electronics Engineering, Chungnam National University

• Choi Woon-Il

  Dept. of Electronics Engineering, Chungnam National University

• Lee Hi-Deok

  Dept. of Electronics Engineering, Chungnam National University

• Park Sung-soo

  Dept. Of Electronics Engineering Chungnam National University

• Lee Hi-deok

  Dept. Of Electronics Engineering Chungnam National Univ.

• Choi Won-ho

  Dept. Of Electronics Engineering Chungnam National University

• Lee H‐j

  Magnachip Semiconductor Inc.

• Han In-shik

  Dept. Of Electronics Engineering Chungnam National University

• Kwon Hyuk-min

  Dept. Of Electronics Engineering Chungnam National University

• Bok Jung-deuk

  Dept. Of Electronics Engineering Chungnam National University

• Park Seong-hyung

  Dept. Of Electronics Engineering Chungnam National University

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