Dependence of hot carrier reliability and low frequency noise on channel stress in nanoscale n-channel metal-oxide-semiconductor field-effect transistors (Special issue: Dielectric thin films for future electron devices: science and technology)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Kwon Hyuk-min

  Dept. Of Electronics Engineering Chungnam National University

• Bok Jung-deuk

  Dept. Of Electronics Engineering Chungnam National University

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• Effect of nitrogen concentration on low-frequency noise and negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with nitrided gate oxide (Special issue: Dielectric thin films for future electron devices: s
• Dependence of hot carrier reliability and low frequency noise on channel stress in nanoscale n-channel metal-oxide-semiconductor field-effect transistors (Special issue: Dielectric thin films for future electron devices: science and technology)
• Effects of Fluorine Implantation on 1/f Noise, Hot Carrier and NBTI Reliability of MOSFETs

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