Dopant Dependency of Nickel Silicide and Its Improvement Utilizing Ni-Pd (5%) on SOI Substrate for Nano-scale CMOSFET
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Lee Hi-Deok
Dept. of Electronics Engineering, Chungnam National University
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LEE Ga-Won
Dept. of Electronics Engineering, Chungnam National University
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WANG Jin-Suk
Dept. of Electronics Engineering, Chungnam National University
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Lee Hi-deok
Dept. Of Electronics Engineering Chungnam National Univ.
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Wang Jin-suk
Dept. Of Electronics Engineering Chungnam National University
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Lee Ga-won
Dept. Of Electronics Engineering Chungnam National University
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Kim Yeong-cheol
Dept. Of Materials Eng. Korea University Of Technology And Education
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JUNG Soon-Yen
Dept. of Electronics Engineering, Chungnam National University
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ZHANG Ying-Ying
Dept. of Electronics Engineering, Chungnam National University
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ZHONG Zhun
Dept. of Electronics Engineering, Chungnam National University
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LI Shi-Guang
Dept. of Electronics Engineering, Chungnam National University
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PARK Kee-Young
Dept. of Electronics Engineering, Chungnam National University
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Park Kee-young
Dept. Of Electronics Engineering Chungnam National University
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Zhong Zhun
Dept. Of Electronics Engineering Chungnam National University
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Li Shi-guang
Dept. Of Electronics Engineering Chungnam National University
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Jung Soon-yen
Dept. Of Electronics Engineering Chungnam National University
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Zhang Ying-ying
Dept. Of Electronics Engineering Chungnam National University
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- Dopant Dependency of Nickel Silicide and Its Improvement Utilizing Ni-Pd (5%) on SOI Substrate for Nano-scale CMOSFET
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- Dependence of Analog and Digital Performances on Mechanical Film Stress of ILD Layers in Nanoscale CMOSFETs
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