Defects study of retrograde twin well CMOS that has MeV ion implanted buried layer
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概要
- 論文の詳細を見る
High energy ion implanted retrograde well and buried layer applications are newly interested for the scailing of well design rule and latch-up improvement in ULSI. But the high energy ion implant induced defects can degrade the device electrical characteristics. So we investigate the relationship between the defects and device degradation effects in the retrograde well and BILLI well structures. We found that the high energy ion implanted buried layer could make degradation of junction leakage currents and gate oxide reliability. Finally we suggest the method for reducing the defects and improve the device characteristics by RTP anneal of which temperature is higher than 1000℃.
- 社団法人電子情報通信学会の論文
- 1997-07-25
著者
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Kim Young
College of Pharmacy, Chungnam National University
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Kim Young
Korea Food Research Institute
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Kwon Young-in
Dep. Of Food And Nutrition Hannam Univ.
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Cho Nam
Lg Semicon. Ltd.
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KIM Jong-Kwan
LG Semicon.,Ltd.
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Park Seong-Hyung
LG Semicon.,Ltd.
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Huh Yun
LG Semicon.,Ltd.
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Kim In
Korea University
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Yang Wouns
LG Semicon.,Ltd.
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LEE Young-Jong
LG Semicon.,Ltd.
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Hwang Jung
LG Semicon.,Ltd.
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SUNG Yung-Kwon
Korea University
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Kim Young
Coll. Of Pharmacy Chungnam National Univ.
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Lee Y‐j
Samsung Electronics Co. Ltd. Kyunggi‐do Kor
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Hwang Jung
Lg Semicon. Ltd.
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Yang W
Lg Semicon Co. Ltd. Cheongju‐si Kor
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Kim Jong-kwan
Lg Semicon. Ltd.
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Kim Jong-kwan
Department Of Agricultural Biology Korea University
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Kim Young
Korea And College Of Pharmacy Chungbuk National University
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Lee Young-jong
Lg Semicon. Ltd.
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Lee Young-jong
Advanced Technology Laboratory Lg Semicon Co. Ltd.
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Huh Yun
Lg Semicon. Ltd.
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Kim Y
College Of Pharmacy Chungnam National University
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Park Seong-hyung
Lg Semicon. Ltd.
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Lee Young-jong
Advanced Technology Laboratory. Lg Semicon Co.
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Kim Young
Korea University
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Kim In
Korea Electronics Technology Institute Electronics Devices Research Center
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Kim I
Kwangju Inst. Sci. And Technol. (k‐jist) Gwangju Kor
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Yang Wouns
Lg Semicon. Ltd.
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Kim In
Korea Advanced Institute Of Science And Technology
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