Shallow Trench Isolation Characteristics with High-Density-Plasma (HDP) CVD Gap-Fill Oxide for Deep-Submicron CMOS Technologies
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概要
- 論文の詳細を見る
- 1997-09-16
著者
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Yang W
Lg Semicon Co. Ltd. Cheongju‐si Kor
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Lee Youngjong
Advanced Technology Laboratory Lg Semicon Co.
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YANG Wouns
Device Research Team, Semiconductor R&D Center, Samsung Electronics
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Lee S
Hanyang Univ. Seoul Kor
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LEE Seungho
Device Group, Advanced Technology Lab., LG Semicon Co.
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JUNG Kuchul
Device Group, Advanced Technology Lab., LG Semicon Co.
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SON Jeonghwan
Device Group, Advanced Technology Lab., LG Semicon Co.
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CHUNG Sungwoong
Process Group, Advanced Technology Lab., LG Semicon Co.
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CHAE Minchul
Process Group, Advanced Technology Lab., LG Semicon Co.
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KIM Junyong
Process Group, Advanced Technology Lab., LG Semicon Co.
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LEE Youngjong
Device Group, Advanced Technology Lab., LG Semicon Co.
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HWANG Jeongmo
Device Group, Advanced Technology Lab., LG Semicon Co.
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Jung Kuchul
Advanced Technology Laboratory Lg Semicon Co.
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Yang Wouns
Lg Semicon. Ltd.
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Chae Minchul
Process Group Advanced Technology Lab. Lg Semicon Co.
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Son Jeonghwan
Device Group Advanced Technology Lab. Lg Semicon Co.
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Hwang Jeongmo
Device Group Advanced Technology Lab. Lg Semicon Co.
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Chung Sungwoong
Device Group Process Group
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Yang Wouns
Device Group, Advanced Technology Lab., LG Semicon Co.
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