Investigation on the Body Bias Dependency of Gate Induced Drain Leakage Current in the Body-Tied finFET
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Yang Wouns
Advanced Technology Development Team
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PARK Donggun
Device Research Team, R&D Center, Samsung Electronics Co.
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Kim Hui-jung
Device Research Team Semiconductor R&d Center Samsung Electronics
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Park Donggun
Device Research Team
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Kim Chang-kyu
Advanced Technology Development Team
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LEE Chul
Device Research Team, Semiconductor R&D Center, Samsung Electronics
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YOSHIDA Makoto
Device Research Team, Semiconductor R&D Center, Samsung Electronics
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JUNG Kyoung-Ho
Device Research Team, Semiconductor R&D Center, Samsung Electronics
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KIM Chang
Device Research Team, Semiconductor R&D Center, Samsung Electronics
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PARK Heungsik
Process Development Team, Semiconductor R&D Center, Samsung Electronics
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LEE Won-Sok
CAE Team, Semiconductor R&D Center, Samsung Electronics
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KIM Keunnam
Device Research Team, Semiconductor R&D Center, Samsung Electronics
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KAHNG Jaerok
Device Research Team, Semiconductor R&D Center, Samsung Electronics
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YANG Wouns
Device Research Team, Semiconductor R&D Center, Samsung Electronics
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YOSHIDA Makoto
Advanced Technology Development Team
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KAHNG Jae-Rok
Advanced Technology Development Team
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JUNG Kyoung-Ho
Advanced Technology Development Team
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KIM Keunnam
Advanced Technology Development Team
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LEE Chul
Advanced Technology Development Team
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PARK Donggun
Advanced Technology Development Team
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Lee Won-sok
Cae Team Semiconductor R&d Center Samsung Electronics
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Park Heungsik
Process Development Team Semiconductor R&d Center Samsung Electronics
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Yang Wouns
Device Group, Advanced Technology Lab., LG Semicon Co.
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