PARK Donggun | Device Research Team, R&D Center, Samsung Electronics Co.
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概要
関連著者
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PARK Donggun
Device Research Team, R&D Center, Samsung Electronics Co.
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Park Donggun
Device Research Team
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Han Jin-woo
Dept. Of Eecs Korea Advanced Institute Of Science And Technology
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Choi Yang-kyu
Dept. Of Eecs Korea Advanced Institute Of Science And Technology
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Park Donggun
Device Research Team Semiconductor R&d Division Samsung Electronics Co.
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LEE Chul
Device Research Team, Semiconductor R&D Center, Samsung Electronics
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KIM Keunnam
Device Research Team, Semiconductor R&D Center, Samsung Electronics
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KIM Keunnam
Advanced Technology Development Team
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LEE Chul
Advanced Technology Development Team
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PARK Donggun
Advanced Technology Development Team
著作論文
- A Highly Scalable Split-Gate SONOS Flash Memory with Programmable-Pass and Pure-Select Transistors for Sub-90-nm Technology
- Investigation on the Body Bias Dependency of Gate Induced Drain Leakage Current in the Body-Tied finFET
- Optimization of Layout and Doping Profile Design for BT(Body Tied)-FinFET DRAM
- FinFET NAND Flash with Nitride/Si Nanocrystal/Nitride Hybrid Trap Layer
- A Comprehensive Study of Hot-Carrier Effects in Body-Tied FinFETs
- A Comprehensive Study of Hot-Carrier Behaviors with Consideration of Non-Local, Series Resistance, Quantum, and Temperature Effects in Multi-Gate FinFETs