Choi Yang-kyu | Dept. Of Eecs Korea Advanced Institute Of Science And Technology

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概要

• CHOI Yang-Kyuの詳細を見る
• 同名の論文著者
• Dept. Of Eecs Korea Advanced Institute Of Science And Technologyの論文著者

関連著者

• Choi Yang-kyu

  Dept. Of Eecs Korea Advanced Institute Of Science And Technology

• Choi Yang

  Dept. Of Eecs Korea Advanced Institute Of Science And Technology

• Choi Yang

  Dept. Of Eecs Kaist

• Choi Yang-kyu

  Electrical Eng. Dept. Nanobioelectronic Lab. Korean Advanced Inst. Of Science And Technology

• Kim Kuk-hwan

  Dept. Of Eecs Korea Advanced Institute Of Science And Technology

• Han Jin-woo

  Dept. Of Eecs Korea Advanced Institute Of Science And Technology

• Ryu Seong

  Dept. of EECS, Korea Advanced Institute of Science and Technology

• Ryu Seong

  Dept. Of Eecs Kaist

• Ryu Seong-Wan

  Dept. of EECS, KAIST

• Kim Kuk-Hwan

  Dept. of EECS, Korea Advanced Institute of Science and Technology

• LEE Hyunjin

  Dept. of EECS, Korea Advanced Institute of Science and Technology

• Kim Kuk

  Dept. Of Eecs Korea Advanced Institute Of Science And Technology

• Lee Hyunjin

  Dept. Of Eecs Korea Advanced Institute Of Science And Technology

• Kang Hyun

  Dept. Of Eecs Kaist

• Kim Kuk

  Dept. of EECS, Korea Advanced Institute of Science and Technology

• Ku Cheon

  Dept. of EECS, Korea Advanced Institute of Science and Technology

• PARK Donggun

  Device Research Team, R&D Center, Samsung Electronics Co.

• Ku Cheon

  Dept. Of Eecs Korea Advanced Institute Of Science And Technology

• Ryu Seong

  Dept. Of Eecs Korea Advanced Institute Of Science And Technology

• Park Donggun

  Device Research Team Semiconductor R&d Division Samsung Electronics Co.

• Park Donggun

  Device Research Team

• Ku Cheon-Hak

  Dept. of EECS, Korea Advanced Institute of Science and Technology

• Ryu Seong-Wan

  Dept. of EECS, Korea Advanced Institute of Science and Technology

• Han Jin-Woo

  Dept. of EECS, Korea Advanced Institute of Science and Technology

• Choi Yang-Kyu

  Dept. of EECS, Korea Advanced Institute of Science and Technology

• Kang Hyun-Sik

  Dept. of EECS, KAIST

• LEE Choong-Ho

  Device Research Team, R&D Center, Samsung Electronics

• Lee Choong-ho

  Device Research Team R&d Center Samsung Electronics

• Lee Choong-ho

  Device Research Team Semiconductor R&d Division Samsung Electronics Co.

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著作論文

• Investigation of Gate Misalignment Effects in FinFETs(Session 7A Silicon Devices IV,AWAD2006)
• Investigation of Gate Misalignment Effects in FinFETs(Session 7A Silicon Devices IV,AWAD2006)
• Novel Structures for a 2-Bit per Cell of Nonvolatile Memory Using an Asymmetric Double Gate(Si Devices and Processes,Fundamental and Application of Advanced Semiconductor Devices)
• Novel Structures for 2-Bit Per Cell of NVM Using Asymmetric Double Gate (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Novel Structures for 2-Bit Per Cell of NVM Using Asymmetric Double Gate (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• A Compact Modeling of Threshold Voltage Shift by a Quantum Confinement Effect in UTB MOSFET (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• A Compact Modeling of Threshold Voltage Shift by a Quantum Confinement Effect in UTB MOSFET (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• A Comprehensive Study of Punchthrough Characteristics in Multiple-Gate MOSFETs--The Trend of Punchthrough Voltages in Various Gate Shapes of SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• A Comprehensive Study of Punchthrough Characteristics in Multiple-Gate MOSFETs--The Trend of Punchthrough Voltages in Various Gate Shapes of SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• A Comprehensive Study of Hot-Carrier Effects in Body-Tied FinFETs
• A Comprehensive Study of Hot-Carrier Behaviors with Consideration of Non-Local, Series Resistance, Quantum, and Temperature Effects in Multi-Gate FinFETs

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