A Compact Modeling of Threshold Voltage Shift by a Quantum Confinement Effect in UTB MOSFET (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
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概要
- 論文の詳細を見る
A compact modeling of threshold voltage shift by a quantum confinement effect in ultra-thin body (UTB) MOSFET is studied theoretically. As a body thickness of UTB MOSFET reduces into the nano-scale regime, the threshold voltage shift by the quantum confinement effect becomes a big concern. The threshold voltage shift as a function of the body thickness (T_<si>) is modeled analytically using perturbation theory for two types of potential well shape: linear and quadratic. Calculated data from the analytical model show a good agreement to the measured data from the fabricated UTB MOSFET in the range of body thickness from 4nm to 8nm.
- 社団法人電子情報通信学会の論文
- 2005-06-23
著者
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Choi Yang
Dept. Of Eecs Korea Advanced Institute Of Science And Technology
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Choi Yang-kyu
Electrical Eng. Dept. Nanobioelectronic Lab. Korean Advanced Inst. Of Science And Technology
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Choi Yang-kyu
Dept. Of Eecs Korea Advanced Institute Of Science And Technology
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Choi Yang
Dept. Of Eecs Kaist
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Ku Cheon
Dept. of EECS, Korea Advanced Institute of Science and Technology
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Ryu Seong
Dept. of EECS, Korea Advanced Institute of Science and Technology
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Ku Cheon
Dept. Of Eecs Korea Advanced Institute Of Science And Technology
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Ryu Seong
Dept. Of Eecs Korea Advanced Institute Of Science And Technology
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Ryu Seong
Dept. Of Eecs Kaist
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Ku Cheon-Hak
Dept. of EECS, Korea Advanced Institute of Science and Technology
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Ryu Seong-Wan
Dept. of EECS, Korea Advanced Institute of Science and Technology
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Ryu Seong-Wan
Dept. of EECS, KAIST
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