Choi Yang | Dept. Of Eecs Kaist
スポンサーリンク
概要
関連著者
-
Choi Yang
Dept. Of Eecs Korea Advanced Institute Of Science And Technology
-
Choi Yang-kyu
Dept. Of Eecs Korea Advanced Institute Of Science And Technology
-
Choi Yang
Dept. Of Eecs Kaist
-
Choi Yang-kyu
Electrical Eng. Dept. Nanobioelectronic Lab. Korean Advanced Inst. Of Science And Technology
-
Ryu Seong
Dept. of EECS, Korea Advanced Institute of Science and Technology
-
Ryu Seong
Dept. Of Eecs Kaist
-
Ryu Seong-Wan
Dept. of EECS, KAIST
-
Kang Hyun
Dept. Of Eecs Kaist
-
LEE Hyunjin
Dept. of EECS, Korea Advanced Institute of Science and Technology
-
Kim Kuk
Dept. of EECS, Korea Advanced Institute of Science and Technology
-
Ku Cheon
Dept. of EECS, Korea Advanced Institute of Science and Technology
-
Kim Kuk
Dept. Of Eecs Korea Advanced Institute Of Science And Technology
-
Kim Kuk-hwan
Dept. Of Eecs Korea Advanced Institute Of Science And Technology
-
Ku Cheon
Dept. Of Eecs Korea Advanced Institute Of Science And Technology
-
Ryu Seong
Dept. Of Eecs Korea Advanced Institute Of Science And Technology
-
Lee Hyunjin
Dept. Of Eecs Korea Advanced Institute Of Science And Technology
-
Ku Cheon-Hak
Dept. of EECS, Korea Advanced Institute of Science and Technology
-
Ryu Seong-Wan
Dept. of EECS, Korea Advanced Institute of Science and Technology
-
Kang Hyun-Sik
Dept. of EECS, KAIST
著作論文
- Novel Structures for 2-Bit Per Cell of NVM Using Asymmetric Double Gate (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Novel Structures for 2-Bit Per Cell of NVM Using Asymmetric Double Gate (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- A Compact Modeling of Threshold Voltage Shift by a Quantum Confinement Effect in UTB MOSFET (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- A Compact Modeling of Threshold Voltage Shift by a Quantum Confinement Effect in UTB MOSFET (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- A Comprehensive Study of Punchthrough Characteristics in Multiple-Gate MOSFETs--The Trend of Punchthrough Voltages in Various Gate Shapes of SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- A Comprehensive Study of Punchthrough Characteristics in Multiple-Gate MOSFETs--The Trend of Punchthrough Voltages in Various Gate Shapes of SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))