Ryu Seong | Dept. of EECS, Korea Advanced Institute of Science and Technology
スポンサーリンク
概要
関連著者
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Choi Yang
Dept. Of Eecs Korea Advanced Institute Of Science And Technology
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Choi Yang-kyu
Dept. Of Eecs Korea Advanced Institute Of Science And Technology
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Choi Yang
Dept. Of Eecs Kaist
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Ryu Seong
Dept. of EECS, Korea Advanced Institute of Science and Technology
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Ryu Seong
Dept. Of Eecs Kaist
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Ryu Seong-Wan
Dept. of EECS, KAIST
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Kang Hyun
Dept. Of Eecs Kaist
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Choi Yang-kyu
Electrical Eng. Dept. Nanobioelectronic Lab. Korean Advanced Inst. Of Science And Technology
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Ku Cheon
Dept. of EECS, Korea Advanced Institute of Science and Technology
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Ku Cheon
Dept. Of Eecs Korea Advanced Institute Of Science And Technology
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Ryu Seong
Dept. Of Eecs Korea Advanced Institute Of Science And Technology
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Ku Cheon-Hak
Dept. of EECS, Korea Advanced Institute of Science and Technology
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Ryu Seong-Wan
Dept. of EECS, Korea Advanced Institute of Science and Technology
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Kang Hyun-Sik
Dept. of EECS, KAIST
著作論文
- A Compact Modeling of Threshold Voltage Shift by a Quantum Confinement Effect in UTB MOSFET (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- A Compact Modeling of Threshold Voltage Shift by a Quantum Confinement Effect in UTB MOSFET (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- A Comprehensive Study of Punchthrough Characteristics in Multiple-Gate MOSFETs--The Trend of Punchthrough Voltages in Various Gate Shapes of SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- A Comprehensive Study of Punchthrough Characteristics in Multiple-Gate MOSFETs--The Trend of Punchthrough Voltages in Various Gate Shapes of SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))