A Comprehensive Study of Hot-Carrier Behaviors with Consideration of Non-Local, Series Resistance, Quantum, and Temperature Effects in Multi-Gate FinFETs
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Han Jin-woo
Dept. Of Eecs Korea Advanced Institute Of Science And Technology
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Choi Yang-kyu
Dept. Of Eecs Korea Advanced Institute Of Science And Technology
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PARK Donggun
Device Research Team, R&D Center, Samsung Electronics Co.
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Park Donggun
Device Research Team Semiconductor R&d Division Samsung Electronics Co.
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Park Donggun
Device Research Team
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