Park Donggun | Device Research Team

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著作論文

A Highly Scalable Split-Gate SONOS Flash Memory with Programmable-Pass and Pure-Select Transistors for Sub-90-nm Technology
Investigation on the Body Bias Dependency of Gate Induced Drain Leakage Current in the Body-Tied finFET
Optimization of Layout and Doping Profile Design for BT(Body Tied)-FinFET DRAM
FinFET NAND Flash with Nitride/Si Nanocrystal/Nitride Hybrid Trap Layer
A Comprehensive Study of Hot-Carrier Effects in Body-Tied FinFETs
A Comprehensive Study of Hot-Carrier Behaviors with Consideration of Non-Local, Series Resistance, Quantum, and Temperature Effects in Multi-Gate FinFETs
Fin-Type Field-Effect Transistor NAND Flash with Nitride/Silicon Nanocrystal/Nitride Hybrid Trap Layer
Highly Manufacturable and Reliable 80-nm Gate Twin Silicon–Oxide–Nitride–Oxide–Silicon Memory Transistor

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