YOSHIDA Makoto | Device Research Team, Semiconductor R&D Center, Samsung Electronics

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概要

• 同名の論文著者
• Device Research Team, Semiconductor R&D Center, Samsung Electronicsの論文著者

関連著者

• Yang Wouns

  Advanced Technology Development Team

• PARK Donggun

  Device Research Team, R&D Center, Samsung Electronics Co.

• Kim Hui-jung

  Device Research Team Semiconductor R&d Center Samsung Electronics

• Park Donggun

  Device Research Team

• Kim Chang-kyu

  Advanced Technology Development Team

• LEE Chul

  Device Research Team, Semiconductor R&D Center, Samsung Electronics

• YOSHIDA Makoto

  Device Research Team, Semiconductor R&D Center, Samsung Electronics

• JUNG Kyoung-Ho

  Device Research Team, Semiconductor R&D Center, Samsung Electronics

• KIM Chang

  Device Research Team, Semiconductor R&D Center, Samsung Electronics

• PARK Heungsik

  Process Development Team, Semiconductor R&D Center, Samsung Electronics

• LEE Won-Sok

  CAE Team, Semiconductor R&D Center, Samsung Electronics

• KIM Keunnam

  Device Research Team, Semiconductor R&D Center, Samsung Electronics

• KAHNG Jaerok

  Device Research Team, Semiconductor R&D Center, Samsung Electronics

• YANG Wouns

  Device Research Team, Semiconductor R&D Center, Samsung Electronics

• YOSHIDA Makoto

  Advanced Technology Development Team

• KAHNG Jae-Rok

  Advanced Technology Development Team

• JUNG Kyoung-Ho

  Advanced Technology Development Team

• KIM Keunnam

  Advanced Technology Development Team

• LEE Chul

  Advanced Technology Development Team

• PARK Donggun

  Advanced Technology Development Team

• Lee Won-sok

  Cae Team Semiconductor R&d Center Samsung Electronics

• Park Heungsik

  Process Development Team Semiconductor R&d Center Samsung Electronics

• Yang Wouns

  Device Group, Advanced Technology Lab., LG Semicon Co.

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著作論文

• Investigation on the Body Bias Dependency of Gate Induced Drain Leakage Current in the Body-Tied finFET

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