PARK Donggun | Advanced Technology Development Team

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概要

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著作論文

Investigation on the Body Bias Dependency of Gate Induced Drain Leakage Current in the Body-Tied finFET
RC-FinFET (Recessed Channel FinFET) Cell Transistor Technology for Future Generation DRAMs
Optimization of Layout and Doping Profile Design for BT(Body Tied)-FinFET DRAM
Investigation of Body Bias Dependence of Gate-Induced Drain Leakage Current for Body-Tied Fin Field Effect Transistor
Recessed Channel Fin Field-Effect Transistor Cell Technology for Future-Generation Dynamic Random Access Memories

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