JUNG Kyoung-Ho | Advanced Technology Development Team

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概要

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著作論文

Investigation on the Body Bias Dependency of Gate Induced Drain Leakage Current in the Body-Tied finFET
RC-FinFET (Recessed Channel FinFET) Cell Transistor Technology for Future Generation DRAMs
A Novel Multifin Dynamic Random Access Memory Periphery Transistor Technology Using a Spacer Patterning through Gate Polycrystalline Silicon Technique
Investigation of Body Bias Dependence of Gate-Induced Drain Leakage Current for Body-Tied Fin Field Effect Transistor
Recessed Channel Fin Field-Effect Transistor Cell Technology for Future-Generation Dynamic Random Access Memories
Three Series-Connected Transistor Model for a Recess-Channel-Array Transistor and Improvement of Electrical Characteristics by a Bottom Fin Structure

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