Recessed Channel Fin Field-Effect Transistor Cell Technology for Future-Generation Dynamic Random Access Memories

概要

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A new bulk fin field-effect transistor (bulk FinFET) with a recessed channel structure is proposed as a future dynamic random access memory (DRAM) cell transistor following the recess-channel-array transistor (RCAT). An enlarged effective channel length improves the relationship between off-state channel leakage ($I_{\text{off}}$) and gate-induced drain leakage (GIDL) current, which correspond to the static and dynamic retention characteristics of a DRAM chip. The high current drivability of FinFET is maintained even with a recessed channel. A recessed-channel FinFET (RC-FinFET) shows excellent DC characteristics (subthreshold swing, drain-induced barrier lowering and body-bias effect) and longer retention time than a conventional local-damascene FinFET (LD-FinFET).
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-04-25