Investigation of Body Bias Dependence of Gate-Induced Drain Leakage Current for Body-Tied Fin Field Effect Transistor
スポンサーリンク
概要
- 論文の詳細を見る
The body bias dependence of gate-induced drain leakage (GIDL) current for a fin field effect transistor fabricated on a bulk Si wafer (bulk FinFET) is investigated. The local damascene (LD) bulk FinFET is measured under various bias conditions and the effect of the body-bias-induced lateral electric field on GIDL current is evaluated. A lateral electric field shield effect under fin depleted condition is proposed and it is validated by the three-terminal band-to-band tunneling current model. The GIDL current of the bulk FinFET can be reduced by reducing the body bias, and an improvement in retention characteristics is expected.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-09-25
著者
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Yang Wouns
Advanced Technology Development Team
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Kim Chang-kyu
Advanced Technology Development Team
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YOSHIDA Makoto
Advanced Technology Development Team
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KAHNG Jae-Rok
Advanced Technology Development Team
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JUNG Kyoung-Ho
Advanced Technology Development Team
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KIM Keunnam
Advanced Technology Development Team
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PARK Donggun
Advanced Technology Development Team
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Lee Won-sok
Cae Team Semiconductor R&d Center Samsung Electronics
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Park Heungsik
Process Development Team Semiconductor R&d Center Samsung Electronics
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Lee Chul
Advanced Chemical Technology Division Krict
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Kim Hui-Jung
Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Kim Chang-Kyu
Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Park Donggun
Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Park Heungsik
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Lee Won-Sok
CAE Team, Semiconductor R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Lee Chul
Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Yang Wouns
Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Jung Kyoung-Ho
Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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