Shallow Trench Isolation Characteristics with High-Density-Plasma (HDP) CVD Oxide for Deep-Submicron CMOS Technologies
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概要
- 論文の詳細を見る
This paper systematically studies STI characteristics with deposition conditions of High Density Plasma CVD oxide gap-fill material, together with trench sidewall oxide thicknesses. The results show negligible sputter effect of HDP even with low Deposition/Sputter ratio and Si etch damage on the trench sidewall surface observed from leakage current. The leakage current is, however, mainly introduced from the weak trench top corners due to post CMP processes when they are exposed during successive HF cleanings in weak active edges. The results also show excellent isolation characteristics and narrow width effect.
- 社団法人電子情報通信学会の論文
- 1997-07-25
著者
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Yang W
Lg Semicon Co. Ltd. Cheongju‐si Kor
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Yang Wouns
Advanced Technology Laboratory Lg Semicon Co.
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Yang Wouns
Advanced Technology Development Team
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Lee Youngjong
Advanced Technology Laboratory Lg Semicon Co.
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Park Jin
System Ic Research Center Korea Electronics Technology Institute
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Park Jinwon
System Ic Research Center Korea Electronics Technology Institute
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Lee Seungho
Advanced Technology Laboratory, LG Semicon Co.,
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Jung Kuchul
Advanced Technology Laboratory, LG Semicon Co.,
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Chung Sungwoong
Device Group, Process Group
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Choe Jeongdong
Device Group, Process Group
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Park Jinwon
Device Group, Process Group
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Lee S
Hanyang Univ. Seoul Kor
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LEE Seungho
Device Group, Advanced Technology Lab., LG Semicon Co.
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JUNG Kuchul
Device Group, Advanced Technology Lab., LG Semicon Co.
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CHUNG Sungwoong
Process Group, Advanced Technology Lab., LG Semicon Co.
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Jung Kuchul
Advanced Technology Laboratory Lg Semicon Co.
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Choe Jeongdong
Device Group Process Group
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Yang Wouns
Lg Semicon. Ltd.
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Park Jinwon
Device Group Process Group
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Chung Sungwoong
Device Group Process Group
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