Three Series-Connected Transistor Model for a Recess-Channel-Array Transistor and Improvement of Electrical Characteristics by a Bottom Fin Structure

概要

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A three series-connected transistor model is introduced to understand the electrical characteristics of conventional recess-channel-array transistors (RCATs) and modified RCATs. An RCAT is considered to be a serial connection of three transistors consisting of one bottom transistor and two vertical transistors. The electrical characteristics of a cell transistor are explained by a balance of those transistors. A newly modified fin-RCAT which has a fin structure at the bottom of a silicon recess is proposed to improve cell transistor characteristics. This design improves cell current by 70% while maintaining retention characteristics.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2009-05-25