Lee Chul | Advanced Chemical Technology Division Krict
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概要
関連著者
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Lee Chul
Advanced Chemical Technology Division Krict
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Yang Wouns
Advanced Technology Development Team
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YOSHIDA Makoto
Advanced Technology Development Team
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JUNG Kyoung-Ho
Advanced Technology Development Team
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KIM Keunnam
Advanced Technology Development Team
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Kim Chang-kyu
Advanced Technology Development Team
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KAHNG Jae-Rok
Advanced Technology Development Team
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MOON Joon-Seok
Advanced Technology Development Team
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SUNG Hyunju
Advanced Technology Development Team
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PARK Donggun
Advanced Technology Development Team
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LEE Chul
Advanced Technology Development Team
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Oh Kyung-Seok
Advanced Technology Development Team 1, Memory R&D Center, Samsung Electronics Co., Hwasung, Kyunggi 445-701, Korea
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Yang Wouns
Advanced Technology Laboratory Lg Semicon Co.
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Kim Young
Advanced Materials Division Korea Research Institute Of Chemical Technology
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Park Yong-ki
Advanced Chemical Technology Division Krict
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ABDI Sayed
Advanced Chemical Technology Division, KRICT
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Abdi Sayed
Advanced Chemical Technology Division Krict
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Kim Young
Advanced Chemical Technology Division Krict
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Lee Won-sok
Cae Team Semiconductor R&d Center Samsung Electronics
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Park Heungsik
Process Development Team Semiconductor R&d Center Samsung Electronics
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Kim Hui-Jung
Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Jin Gyoyoung
Advanced Technology Development Team 1, Memory R&D Center, Samsung Electronics Co., Hwasung, Kyunggi 445-701, Korea
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Kim Chang-Kyu
Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Moon Joon-Seok
Advanced Technology Development Team 1, Memory R&D Center, Samsung Electronics Co., Hwasung, Kyunggi 445-701, Korea
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Moon Joon-Seok
Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., Hwasung, Kyunggi 445-701, Korea
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Kim Chang-Kyu
Advanced Technology Development Team 1, Memory R&D Center, Samsung Electronics Co., Hwasung, Kyunggi 445-701, Korea
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Kim Chang-Kyu
Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., Hwasung, Kyunggi 445-701, Korea
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Oh Kyung-Seok
Advanced Technology Development Team 1, Memory R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Park Donggun
Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Park Donggun
Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., Hwasung, Kyunggi 445-701, Korea
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Kahng Jaerok
Advanced Technology Development Team 1, Memory R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Park Heungsik
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Kim Keunnam
Advanced Technology Development Team 1, Memory R&D Center, Samsung Electronics Co., Hwasung, Kyunggi 445-701, Korea
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Kim Keunnam
Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., Hwasung, Kyunggi 445-701, Korea
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Kim Keunnam
Advanced Technology Development Team 1, Memory R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Lee Won-Sok
CAE Team, Semiconductor R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Lee Chul
Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Lee Chul
Advanced Technology Development Team 1, Memory R&D Center, Samsung Electronics Co., Hwasung, Kyunggi 445-701, Korea
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Lee Chul
Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., Hwasung, Kyunggi 445-701, Korea
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Yang Wouns
Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Yang Wouns
Advanced Technology Development Team 1, Memory R&D Center, Samsung Electronics Co., Hwasung, Kyunggi 445-701, Korea
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Yang Wouns
Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., Hwasung, Kyunggi 445-701, Korea
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Yang Wouns
Advanced Technology Development Team 1, Memory R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Jung Kyoung-Ho
Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Jung Kyoung-Ho
Advanced Technology Development Team 1, Memory R&D Center, Samsung Electronics Co., Hwasung, Kyunggi 445-701, Korea
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Jung Kyoung-Ho
Advanced Technology Development Team 1, Semiconductor R&D Center, Samsung Electronics Co., Hwasung, Kyunggi 445-701, Korea
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Lee Chul
Advanced Technology Development Team 1, Memory R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Jung Kyoung-Ho
Advanced Technology Development Team 1, Memory R&D Center, Samsung Electronics Co., San #16 Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
著作論文
- RC-FinFET (Recessed Channel FinFET) Cell Transistor Technology for Future Generation DRAMs
- A Novel Multifin Dynamic Random Access Memory Periphery Transistor Technology Using a Spacer Patterning through Gate Polycrystalline Silicon Technique
- Nano Bowls of Carbon by Oxidative Chopping of Carbon Nano Sphere
- Investigation of Body Bias Dependence of Gate-Induced Drain Leakage Current for Body-Tied Fin Field Effect Transistor
- Recessed Channel Fin Field-Effect Transistor Cell Technology for Future-Generation Dynamic Random Access Memories
- Three Series-Connected Transistor Model for a Recess-Channel-Array Transistor and Improvement of Electrical Characteristics by a Bottom Fin Structure