A new patterning technique on UV sensitive transparent film with chip embedded photomask (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

概要

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A new pattering technique on a UV sensitive transparent film that can have important implications for sensor and transparent device applications is proposed. One of the patterning methods on UV sensitive transparent substrates involves UV front-side exposure with an extra photomask, an approach commonly employed in conventional lithographic processes. However, the use of an extra photomask requires an expensive and complicated lithographic process. Thus, this approach is not appropriate for commercial implementation to consumable low-cost device applications. In this paper, a new method involving back-side exposure is demonstrated with a chip embedded photomask. This approach inherently provides a self-alignment process. A SU-8 layer with thicknesses of 30μm and 100μm, respectively, and with designed pattern sizes in a range of 200μm to 700μm was used as a chip embedded photomask to transfer patterns on the front-side of a Polydiacetylene (PDA)-Polyvinyl alcohol (PVA) film substrate with UV light. The UV light was then exposed from the back-side of the chip. A Pyrex glass wafer of 800μm thickness was employed as a substrate, permitting back-side exposure. The designed SU-8 patterns on the Pyrex glass do not allow transmission of the UV light to the PDA-PVA film on the top region of the SU-8 patterns.
社団法人電子情報通信学会の論文
2007-06-18