Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Volcano-Shaped Patterned Sapphire Substrates
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概要
- 論文の詳細を見る
A new volcano-shaped patterned sapphire substrate (VPSS), which enhances the light extraction efficiency (LEE) of GaN-based light emitting diodes (LEDs), was presented. The Monte Carlo ray-tracing method shows that the VPSS with a crater slope angle of about 50° has the highest LEE. To compare the optical characteristics, 380 nm ultraviolet LEDs were grown on an optimized VPSS, hemispherical PSS (HPSS), and planar sapphire substrate by metal-organic chemical vapor deposition (MOCVD). As a result, the extraction efficiency of the LED grown on the optimized VPSS was estimated to be almost 2.8 times larger than that of the planar sapphire substrate and was enhanced 1.6 times compared with that of the LED grown on the HPSS.
- 2010-04-25
著者
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Kim Jae
Korea Aerospace Research Institute
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Kim Young
Korea And College Of Pharmacy Chungbuk National University
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Sung-Ku Kang
Korea Photonics Technology Institute (KOPTI), Gwangju 500-460, Korea
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Kim Sang-Mook
Korea Photonics Technology Institute, Gwangju 500-779, Korea
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Nam Hwang
Korea Photonics Technology Institute (KOPTI), Gwangju 500-460, Korea
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Yeon-Jo Choi
PlusTek Co., Ltd., Gwangju 500-460, Korea
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Seong-Ran Jeon
Korea Photonics Technology Institute (KOPTI), Gwangju 500-460, Korea
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Chang Sub
Department of Physics, Chonnam National University, Gwangju 500-757, Korea
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KIM Sang-Mook
Korea Photonics Technology Institute (KOPTI)
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Sang-Mook Kim
Korea Photonics Technology Institute (KOPTI), Gwangju 500-460, Korea
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Young Woo
Korea Photonics Technology Institute (KOPTI), Gwangju 500-460, Korea
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