Lee Y‐j | Samsung Electronics Co. Ltd. Kyunggi‐do Kor

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著作論文

Trade-Off between Hot Carrier Effect and Current Driving Capability Due to Drain Contact Structures in Deep Submicron MOSFETs
Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
Defects study of retrograde twin well CMOS that has MeV ion implanted buried layer
Defects study of retrograde twin well CMOS that has MeV ion implanted buried layer
Characterization of Corner Induced Leakage Current in Shallow Silicided n^+/p Junction
Shallow Trench Isolation Characteristics with High-Density-Plasma Chemical Vapor Deposition Gap-Fill Oxide for Deep-Submicron CMOS Technologies
Dependence of Subthreshold Hump and Reverse Narrow Channel Effect on the Gate Length by Suppression of Transient Enhanced Diffusion at Trench Isolation Edge
Dependence of Sub-Threshold Hump and RNWE Characteristics on the Gate Length by TED
Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
Characterization of Corner-Induced Leakage Current of a Shallow Silicided n^+/p Junction for Quarter-Micron MOSFETs
Study of Drain Contact Structure Dependent Deep Submicron MOSFET Reliability by Photon Emission Analysis

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