Jung Jong-wan | Hyundai Electronics Industries Co. Ltd.

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著作論文

Dependence of Subthreshold Hump and Reverse Narrow Channel Effect on the Gate Length by Suppression of Transient Enhanced Diffusion at Trench Isolation Edge
Dependence of Sub-Threshold Hump and RNWE Characteristics on the Gate Length by TED
Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
Study of Optimization Guidelines on Nitrogen Concentration in Nitrided Oxide for Logic and Dynamic Random Access Memory Application
New Optimazation Guidelines on Nitrogen Concentration in NO Gate Dieletrics for Advanced Logic and DRAM Application
Dependence of Subthreshold Hump and Reverse Narrow Channel Effect on the Gate Length by Suppression of Transient Enhanced Diffusion at Trench Isolation Edge

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