Yoon Gyu-han | Hyundai Electronics Industries Co. Ltd.
スポンサーリンク
概要
関連著者
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Park Sung-kye
Pg.1 R&d Division Lg Semicon Co. Ltd.
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Yoon Gyu-han
Hyundai Electronics Industries Co. Ltd.
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Lee S‐h
Memory Research And Development Division Hyundai Electronics Industries
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Lee Seong-hoon
Dram Design Memory Product & Technology Development Division Hyundai-electronics Industries
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Lee Sang-ho
Pg.1 R&d Division Lg Semicon Co. Ltd.
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Lee Young-chul
Pg.1 R&d Division Lg Semicon Co. Ltd.
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Lee H
大阪大 産科研
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Park Sung-Kye
PG.1, R&D Division, LG Semicon Co. Ltd.
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Lee Young-Chul
PG.1, R&D Division, LG Semicon Co. Ltd.
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Suh Moon-Sik
PG.1, R&D Division, LG Semicon Co. Ltd.
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Lee Sang-Ho
PG.1, R&D Division, LG Semicon Co. Ltd.
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Lee Hyung
Dept. of Electrical Engineering, Andong National University
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Yoon Gyu-Han
PG.1, R&D Division, LG Semicon Co. Ltd.
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Lee Hyung
Dept. Of Electrical Engineering Andong National University
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Suh Moon-sik
Pg.1 R&d Division Lg Semicon Co. Ltd.
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Lee Y‐c
Kyungpook National Univ. Daegu Kor
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Suh Moon-Sik
PG.1, R&D Division, LG Semicon Co. Ltd.
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Lee Young-Chul
PG.1, R&D Division, LG Semicon Co. Ltd.
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Park S‐k
Korea Inst. Sci. And Technol. Seoul Kor
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Jung J‐w
Hanyang Univ. Seoul Kor
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Kang Dae-kwan
Hyundai Electronics Industries Co. Ltd.
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Park Sung-kun
Department Of Electronic Engineering Kyungpook National University
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Jung Jong-wan
Hyundai Electronics Industries Co. Ltd.
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LEE Youngjong
Hyundai Electronics Industries Co., Ltd.
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Lee Youngjong
Hyundai Electronics Industries Co. Ltd.
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PARK Sung-Kye
Hyundai Electronics Industries Co., Ltd.
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Park Sung-kye
Hyundai Electronics Industries Co. Ltd.
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KANG Dae-Gwan
Hyundal Micro Electronics Co., Ltd.
著作論文
- Moisture Induced Hump Characteristics of Shallow Trench-Isolated Sub-1/4μm nMOSFET
- Moisture Induced Hump Characteristics of Shallow Trench-Isolated Sub-1/4μm nMOSFET
- Moisture Induced Hump Characteristics of Shallow Trench-Isolated Sub-1/4 μm nMOSFET
- Study of Optimization Guidelines on Nitrogen Concentration in Nitrided Oxide for Logic and Dynamic Random Access Memory Application
- New Optimazation Guidelines on Nitrogen Concentration in NO Gate Dieletrics for Advanced Logic and DRAM Application