New Optimazation Guidelines on Nitrogen Concentration in NO Gate Dieletrics for Advanced Logic and DRAM Application
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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Park S‐k
Korea Inst. Sci. And Technol. Seoul Kor
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Jung J‐w
Hanyang Univ. Seoul Kor
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Kang Dae-kwan
Hyundai Electronics Industries Co. Ltd.
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Park Sung-kun
Department Of Electronic Engineering Kyungpook National University
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Park Sung-kye
Pg.1 R&d Division Lg Semicon Co. Ltd.
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Jung Jong-wan
Hyundai Electronics Industries Co. Ltd.
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LEE Youngjong
Hyundai Electronics Industries Co., Ltd.
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Lee Youngjong
Hyundai Electronics Industries Co. Ltd.
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Yoon Gyu-han
Hyundai Electronics Industries Co. Ltd.
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PARK Sung-Kye
Hyundai Electronics Industries Co., Ltd.
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KANG Dae-Gwan
Hyundal Micro Electronics Co., Ltd.
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Park Sung-kye
Hyundai Electronics Industries Co. Ltd.
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- Study of Optimization Guidelines on Nitrogen Concentration in Nitrided Oxide for Logic and Dynamic Random Access Memory Application
- New Optimazation Guidelines on Nitrogen Concentration in NO Gate Dieletrics for Advanced Logic and DRAM Application
- Dependence of Subthreshold Hump and Reverse Narrow Channel Effect on the Gate Length by Suppression of Transient Enhanced Diffusion at Trench Isolation Edge