Lee Hi-deok | Advanced Technology Laboratory. Lg Semicon Co.
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概要
関連著者
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Lee Hi-deok
Advanced Technology Laboratory. Lg Semicon Co.
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Lee Hi-deok
R&d Division Lg Semicon Co. Ltd.
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Lee Hi-deok
Advanced Technology Laboratory Lg Semicon Co. Ltd.
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Lee H‐d
Chungnam National Univ. Taejon Kor
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Jang M‐j
Hynix Semiconductor Co. Choongbuk Kor
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Hwang J‐m
Hyundai Microelectronics Co. Cheongju Kor
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Hwang Jeong-mo
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Hwang Jeong-mo
R&d Division Lg Semicon Co. Ltd.
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Hwang Jeong-mo
R&d Division Hyundai Microelectronics Co.
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Hwang Jeong-mo
Advan. Tech. Lab. Lg Semicon Co. Ltd.
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Hwang J.-m.
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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LEE Hi-Deok
Advanced Technology Laboratory., LG Semicon Co.
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LEE Young-Jong
Advanced Technology Laboratory., LG Semicon Co.
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Lee Y‐j
Samsung Electronics Co. Ltd. Kyunggi‐do Kor
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Lee Young-jong
Lg Semicon. Ltd.
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Lee Young-jong
Advanced Technology Laboratory Lg Semicon Co. Ltd.
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Lee Young-jong
Advanced Technology Laboratory. Lg Semicon Co.
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Kang Dae-gwan
R&d Division Lg Semicon Co. Ltd.
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Lee S‐g
Korea Univ. Chungnam Kor
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Lee Hi-Deok
R&D Division, LG Semicon Co., Ltd.
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Jang Myoung-Jun
R&D Division, LG Semicon Co., Ltd.
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Park Myoung-Kyu
R&D Division, LG Semicon Co., Ltd.
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Kang Dae-Gwan
R&D Division, LG Semicon Co., Ltd.
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Hwang Jeong-Mo
R&D Division, LG Semicon Co., Ltd.
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Park Myoung-kyu
R&d Division Lg Semicon Co. Ltd.
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Hwang Jeong-Mo
Advanced Technology Laboratory., LG Semicon Co.,
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Park S‐h
Magnachip Semiconductor Inc.
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LEE Key-Min
Memory R&D Division, Hynix Semiconductor Co.
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PARK Seong-Hyun
Memory R&D Division, Hynix Semiconductor Co.
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JANG Myoung-Jun
Memory R&D Division, Hynix Semiconductor Co.
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LEE Joo-Hyoung
Memory R&D Division, Hynix Semiconductor Co.
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YOON Ki-Seok
Memory R&D Division, Hynix Semiconductor Co.
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PARK Geun-Suk
Memory R&D Division, Hynix Semiconductor Co.
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KANG Keun-Koo
Department of Physics, Chungbuk Nataional University
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PARK Young-Jin
Memory R&D Division, Hynix Semiconductor Co.
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Park S‐h
Yonsei Univ. Seoul Kor
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Park S‐h
Hynix Semiconductor Choongbuk Kor
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Park Seong-hyun
Magnachip Semiconductor Inc.
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Jang Myoung-jun
Memory R&d Division Hynix Semiconductor Co.
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Lee Joo-hyoung
Memory R&d Division Hynix Semiconductor Co.
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Cho Jung-hoon
Memory R&d Division Hynix Semiconductor Co.
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Lee Key-min
Memory R&d Division Hynix Semiconductor Co.
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Park Geun-suk
Memory R&d Division Hynix Semiconductor Co.
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Park Young
Feram Team Memory R&d Division Hynix Semiconductor Incorporated
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Park Young-jin
Memory R&d Division Hynix Semiconductor Co.
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Lee J‐h
Lg Electronics Inst. Technol. Seoul Kor
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Kang Keun-koo
Department Of Physics Chungbuk Nataional University
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Yoon Ki-seok
Memory R&d Division Hynix Semiconductor Co.
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Lee J‐h
Wonkwang Univ. Chonpuk Kor
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Park S‐h
Department Of Physics And Semiconductor Science Catholic University Of Daegu
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LEE Seung-Ho
Advanced Technology Laboratory, LG Semicon Co., Ltd.
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Park Y‐j
Memory R&d Division Hynix Semiconductor Co.
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Lee Ju-Hyeon
School of Electrical Engineering, Wonkwang University
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Kwon Oh-kyong
Department Of Electrical Engineering Hanyang University
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LEE Sang-Gi
Department of Physics Hanyang University
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JEONG Ju-Young
Department of Electrical Engineering The University of Suwon
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EO Yungseon
Department of Electrical Engineering Hanyang University
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LEE Chang-Hyo
Department of Physics Hanyang University
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Lee Hi-Deok
Dept. of Electronics Engineering, Chungnam National University
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JI Hee-Hwan
Department of Electronics Engineering, Chungnam National University
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LEE Hi-Deok
Department of Electronics Engineering, Chungnam National University
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BAE Mi-Suk
Department of Electronics Engineering, Chungnam National University
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CHO Jung-Hoon
Memory R&D Division, Hynix Semiconductor Co.
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Kwon O‐k
Division Of Electrical And Computer Engineering Hanyang University
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Kwon Oh-keun
Semiconductor Process And Device Laboratory Dept. Of Electronic Engineering Chung-ang University
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Lee Hi-deok
Department Of Electronics Engineering Chungnam National University
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Lee Hi-deok
Dept. Of Electronics Engineering Chungnam National Univ.
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Hwang Hyun-sang
Advan. Tech. Lab. Lg Semicon Co. Ltd.
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JUNG Jong-Wan
Advan. Tech. Lab., LG Semicon Co., Ltd.
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LEE Kye-Nam
Advan. Tech. Lab., LG Semicon Co., Ltd.
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Chen Y‐w
National Cheng‐kung Univ. Tainan Twn
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Bae Mi-suk
Department Of Electronics Engineering Chungnam National University
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KANG Keun-Koo
Dept. of Physics, Chungbuk Nataional University
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CHOI Jung-Hoon
Memory R&D Division, Hynix Semiconductor Co.
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Lee H‐d
Lg Semicon Co. Choong‐buk Kor
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Yang W
Lg Semicon Co. Ltd. Cheongju‐si Kor
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Yang Wouns
Advanced Technology Laboratory Lg Semicon Co.
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Yang Wouns
Advanced Technology Development Team
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Yang Wouns
Advanced Technology Laboratory Lg Semicon Co. Ltd.
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Fang Y‐k
National Cheng Kung Univ. Taina Twn
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Chang Chun-yen
Institute Of Electronics National Chiao Tung University
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Son Jeong-hwan
Advanced Technology Laboratory Lg Semicon Co. Ltd.
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Fang Yean-kuen
Vlsi Technology Laboratory Electrical Engineering National Cheng Kung University
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Fang Yean-kuen
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kuang University
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Park Seong-hyung
Lg Semicon. Ltd.
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Chen Yu-wen
Semiconductor And System Laboratories National Cheng Kung University
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FANG Yean-Kuen
Semiconductor and System Laboratories, National Cheng Kung University
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LEE Hong-Da
Semiconductor and System Laboratories, National Cheng Kung University
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LEE Sang-Gi
Advanced Technology Laboratory, LG Semicon Co., Ltd.
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Fang Yean-kuen
Semiconductor And System Laboratories National Cheng Kung University
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Lee Kye-nam
Advan. Tech. Lab. Lg Semicon Co. Ltd.
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Kwon Oh-kyong
Department Of Electoronic Engineering Hanyang University
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Jung Jong-wan
Advan. Tech. Lab. Lg Semicon Co. Ltd.
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Chang Chun-yen
Institute Of Electronics National Chiao Tang University:national Nano-device Laboratories
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Lee Hong-da
Semiconductor And System Laboratories National Cheng Kung University
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Ji Hee-hwan
Department Of Electronics Engineering Chungnam National University
著作論文
- Trade-Off between Hot Carrier Effect and Current Driving Capability Due to Drain Contact Structures in Deep Submicron MOSFETs
- Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology
- Characterization of Corner Induced Leakage Current in Shallow Silicided n^+/p Junction
- Characterization of the Co-Silicide Penetration Depth into the Junction Area
- On-Chip Extraction of Interconnect Line Induced Delay Time for Quarter and Sub-Quarter Micron CMOS Technology
- On-Chip Extraction of Interconnect Line Induced Delay Time for Quarter and Sub-Quarter Micron CMOS Technology
- On-Chip Extraction of Interconnect Line Induced Delay Time for Quarter and Sub-Quarter Micron CMOS Technology
- Shallow Trench Isolation Characteristics with High-Density-Plasma Chemical Vapor Deposition Gap-Fill Oxide for Deep-Submicron CMOS Technologies
- Electrical and Optical Characteristics of an a-Si:H/c-Si Heterojunction Switch
- Characterization of Corner-Induced Leakage Current of a Shallow Silicided n^+/p Junction for Quarter-Micron MOSFETs