Hwang Jeong-Mo | Advanced Technology Laboratory., LG Semicon Co.,
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概要
関連著者
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Hwang Jeong-Mo
Advanced Technology Laboratory., LG Semicon Co.,
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Hwang J‐m
Hyundai Microelectronics Co. Cheongju Kor
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Hwang Jeong-mo
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Hwang Jeong-mo
R&d Division Lg Semicon Co. Ltd.
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Hwang Jeong-mo
R&d Division Hyundai Microelectronics Co.
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Hwang Jeong-mo
Advan. Tech. Lab. Lg Semicon Co. Ltd.
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Hwang J.-m.
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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LEE Young-Jong
Advanced Technology Laboratory., LG Semicon Co.
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Lee Y‐j
Samsung Electronics Co. Ltd. Kyunggi‐do Kor
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Lee Young-jong
Lg Semicon. Ltd.
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Lee Young-jong
Advanced Technology Laboratory Lg Semicon Co. Ltd.
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Lee Young-jong
Advanced Technology Laboratory. Lg Semicon Co.
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Lee S‐g
Korea Univ. Chungnam Kor
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Kwon Oh-kyong
Department Of Electrical Engineering Hanyang University
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LEE Hi-Deok
Advanced Technology Laboratory., LG Semicon Co.
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JEONG Ju-Young
Department of Electrical Engineering The University of Suwon
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LEE Chang-Hyo
Department of Physics Hanyang University
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Lee sang-Gi
Dept. of Physics Hanyang Univ.
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Hwang Hyunsang
Advanced Technology Laboratory., LG Semicon Co.,
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Jeong Ju-Young
Dept. of Elec. Eng., The Univ. of Suwon.
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Kwon Oh-Kyong
Dept. of Elec. Eng., Hanyang Univ.
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Lee Chang-Hyo
Dept. of Physics Hanyang Univ.
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HWANG Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Kwon O‐k
Division Of Electrical And Computer Engineering Hanyang University
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Kwon Oh-keun
Semiconductor Process And Device Laboratory Dept. Of Electronic Engineering Chung-ang University
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Lee Hi-deok
R&d Division Lg Semicon Co. Ltd.
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Lee Hi-deok
Advanced Technology Laboratory Lg Semicon Co. Ltd.
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Lee Hi-deok
Advanced Technology Laboratory. Lg Semicon Co.
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Hwang H
Gwangju Inst. Sci. And Technol. Gwangju Kor
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Hwang H
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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Hwang Hyunsang
Advanced Technology Laboratory. Lg Semicon Co.
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Hwang Hyunsang
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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Lee H‐d
Chungnam National Univ. Taejon Kor
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CHO Heung-Jae
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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PARK Dae-Gyu
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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YEO In-Seok
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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Cho Heung-jae
Memory R&d Division Hynix Semiconductor Inc.
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Yeo In-seok
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Yeo In-seok
Advanced Process Team Memory R&d Div. Hynix Semiconductor Inc.
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Cho Heung-jae
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Park Dae-gyu
Memory R&d Division Hynix Semiconductor. Inc.
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Park Dae-gyu
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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ROH Jae-Sung
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co., Ltd.
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Roh J‐s
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Roh Jae-sung
Advanced Process-capacitor Memory Research & Development Division Hyundai Electronics Industries
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Hwang Hyun-sang
Advan. Tech. Lab. Lg Semicon Co. Ltd.
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Yeo I‐s
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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JUNG Jong-Wan
Advan. Tech. Lab., LG Semicon Co., Ltd.
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LEE Kye-Nam
Advan. Tech. Lab., LG Semicon Co., Ltd.
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LEE Seung-Ho
Advanced Technology Laboratory, LG Semicon Co., Ltd.
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Roh Jae-sung
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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LEE Sang-Gi
Advanced Technology Laboratory, LG Semicon Co., Ltd.
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Cho Hag-ju
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd
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Roh J‐s
Memory Research And Development Division Hynix Semiconductor Inc.
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Lee Kye-nam
Advan. Tech. Lab. Lg Semicon Co. Ltd.
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Jung Jong-wan
Advan. Tech. Lab. Lg Semicon Co. Ltd.
著作論文
- Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
- Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
- Characterization of Corner Induced Leakage Current in Shallow Silicided n^+/p Junction
- TaO_xN_y Gate Dielectric with Improved Thermal Stability
- Characterization of Corner-Induced Leakage Current of a Shallow Silicided n^+/p Junction for Quarter-Micron MOSFETs