LEE Seung-Ho | Advanced Technology Laboratory, LG Semicon Co., Ltd.
スポンサーリンク
概要
関連著者
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LEE Hi-Deok
Advanced Technology Laboratory., LG Semicon Co.
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LEE Young-Jong
Advanced Technology Laboratory., LG Semicon Co.
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Lee Hi-deok
R&d Division Lg Semicon Co. Ltd.
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Lee Hi-deok
Advanced Technology Laboratory Lg Semicon Co. Ltd.
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Lee Hi-deok
Advanced Technology Laboratory. Lg Semicon Co.
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Lee S‐g
Korea Univ. Chungnam Kor
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Lee Y‐j
Samsung Electronics Co. Ltd. Kyunggi‐do Kor
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Lee Young-jong
Lg Semicon. Ltd.
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Lee Young-jong
Advanced Technology Laboratory Lg Semicon Co. Ltd.
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LEE Seung-Ho
Advanced Technology Laboratory, LG Semicon Co., Ltd.
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Lee Young-jong
Advanced Technology Laboratory. Lg Semicon Co.
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Lee H‐d
Chungnam National Univ. Taejon Kor
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Hwang Jeong-Mo
Advanced Technology Laboratory., LG Semicon Co.,
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Yang W
Lg Semicon Co. Ltd. Cheongju‐si Kor
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Yang Wouns
Advanced Technology Laboratory Lg Semicon Co.
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Yang Wouns
Advanced Technology Development Team
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Yang Wouns
Advanced Technology Laboratory Lg Semicon Co. Ltd.
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Son Jeong-hwan
Advanced Technology Laboratory Lg Semicon Co. Ltd.
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Hwang J‐m
Hyundai Microelectronics Co. Cheongju Kor
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Hwang Jeong-mo
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Hwang Jeong-mo
R&d Division Lg Semicon Co. Ltd.
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Hwang Jeong-mo
R&d Division Hyundai Microelectronics Co.
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LEE Sang-Gi
Advanced Technology Laboratory, LG Semicon Co., Ltd.
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Hwang Jeong-mo
Advan. Tech. Lab. Lg Semicon Co. Ltd.
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Hwang J.-m.
Hyundai Electronics Industries Co.ltd. Memory R&d Division
著作論文
- Shallow Trench Isolation Characteristics with High-Density-Plasma Chemical Vapor Deposition Gap-Fill Oxide for Deep-Submicron CMOS Technologies
- Characterization of Corner-Induced Leakage Current of a Shallow Silicided n^+/p Junction for Quarter-Micron MOSFETs