Lee Hi-deok | Advanced Technology Laboratory Lg Semicon Co. Ltd.

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著作論文

Trade-Off between Hot Carrier Effect and Current Driving Capability Due to Drain Contact Structures in Deep Submicron MOSFETs
Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology
Characterization of Corner Induced Leakage Current in Shallow Silicided n^+/p Junction
Characterization of the Co-Silicide Penetration Depth into the Junction Area
On-Chip Extraction of Interconnect Line Induced Delay Time for Quarter and Sub-Quarter Micron CMOS Technology
On-Chip Extraction of Interconnect Line Induced Delay Time for Quarter and Sub-Quarter Micron CMOS Technology
On-Chip Extraction of Interconnect Line Induced Delay Time for Quarter and Sub-Quarter Micron CMOS Technology
Shallow Trench Isolation Characteristics with High-Density-Plasma Chemical Vapor Deposition Gap-Fill Oxide for Deep-Submicron CMOS Technologies
Characterization of Corner-Induced Leakage Current of a Shallow Silicided n^+/p Junction for Quarter-Micron MOSFETs

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