Trade-Off between Hot Carrier Effect and Current Driving Capability Due to Drain Contact Structures in Deep Submicron MOSFETs

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-03-30

著者

• Kwon Oh-kyong

  Department Of Electrical Engineering Hanyang University

• LEE Sang-Gi

  Department of Physics Hanyang University

• LEE Hi-Deok

  Advanced Technology Laboratory., LG Semicon Co.

• LEE Young-Jong

  Advanced Technology Laboratory., LG Semicon Co.

• JEONG Ju-Young

  Department of Electrical Engineering The University of Suwon

• EO Yungseon

  Department of Electrical Engineering Hanyang University

• LEE Chang-Hyo

  Department of Physics Hanyang University

• Kwon O‐k

  Division Of Electrical And Computer Engineering Hanyang University

• Kwon Oh-keun

  Semiconductor Process And Device Laboratory Dept. Of Electronic Engineering Chung-ang University

• Lee Hi-deok

  R&d Division Lg Semicon Co. Ltd.

• Lee Hi-deok

  Advanced Technology Laboratory Lg Semicon Co. Ltd.

• Lee Hi-deok

  Advanced Technology Laboratory. Lg Semicon Co.

• Lee S‐g

  Korea Univ. Chungnam Kor

• Lee Y‐j

  Samsung Electronics Co. Ltd. Kyunggi‐do Kor

• Lee Young-jong

  Lg Semicon. Ltd.

• Lee Young-jong

  Advanced Technology Laboratory Lg Semicon Co. Ltd.

• Lee Young-jong

  Advanced Technology Laboratory. Lg Semicon Co.

• Lee H‐d

  Chungnam National Univ. Taejon Kor

• Kwon Oh-kyong

  Department Of Electoronic Engineering Hanyang University

関連論文

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