A High Performance RF LDMOS Power Transistor for Cellular Station Applications(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
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概要
- 論文の詳細を見る
A novel silicon RF lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) structure, applying a concept of differently doped offset, is proposed. The different offset structure consists of highly doped offset (HDO) and low doped offset (LDO). The HDO structure reduces the on-state resistance of the RF LDMOSFET. The LDO structure reduces the feedback capacitance of the RF LDMOSFET. The cut-off frequency of the proposed RF LDMOSFET is 1OGHz. An RF amplifier with the proposed RF LDMOSFET accomplishes high output power (P_<out>=39.4dBm) and high power added efficiency (PAE=44.7%) at 1.9GHz operating frequency with a 28V drain-source voltage.
- 社団法人電子情報通信学会の論文
- 2004-06-24
著者
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Kwon Oh-kyong
Department Of Electrical Engineering Hanyang University
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Kwon Oh-kyong
Division Of Electrical And Computer Engineering Hanyang University
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KIM Jin-Ho
Division of Electrical and Computer Engineering, Hanyang University
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Kim Jin-ho
Division Of Electrical And Computer Engineering Hanyang University
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Shin Chang-Hee
Division of Electrical and Computer Engineering, Hanyang University
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Kwon O‐k
Division Of Electrical And Computer Engineering Hanyang University
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Kwon Oh-keun
Semiconductor Process And Device Laboratory Dept. Of Electronic Engineering Chung-ang University
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Shin Chang-hee
Division Of Electrical And Computer Engineering Hanyang University
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Kim J‐h
Hanyang Univ. Seoul Kor
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