High-Voltage MOS Devices for Flat Panel Display Drivers
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概要
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We implemented 25V uni-directional and bi-directional MOS devices in a 0.35um standard low-voltage CMOS process for flat panel display driver applications such as TFT-LCD, STN-LCD and organic EL. In this paper, we present the process integration and the high-voltage device performance of 25V intelligent power integrated circuit processes. We obtained the specific on-resistances of 0.13mΩ・cm^2 and 0.81mΩ・cm^2 for 25V urn-directional n-channel and p-channel devices, respectively. And the specific on-resistances of 25V bi-directional n-channel and p-channel devices are 0.69 mΩ・cm^2 and 1.41mΩ・cm^2, respectively. The breakdown voltage of developed high-voltage devices is more than 31V and the performance of those high-voltage devices is the best-reported result for the 25V voltage rating devices.
- 2002-06-24
著者
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Kwon Oh-kyong
Department Of Electrical Engineering Hanyang University
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Kwon Oh-kyong
Division Of Electrical And Computer Engineering Hanyang University
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Kwon O‐k
Division Of Electrical And Computer Engineering Hanyang University
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Kwon Oh-keun
Semiconductor Process And Device Laboratory Dept. Of Electronic Engineering Chung-ang University
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Lee M‐r
Division Of Electrical And Computer Engineering Hanyang University
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Kwag Pyong-Su
Division of Electrical and Computer Engineering, Hanyang University
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Lee Mueng-Ryul
Division of Electrical and Computer Engineering, Hanyang University
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Kwag Pyong-su
Division Of Electrical And Computer Engineering Hanyang University
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