Accurate physical DC and AC models of high-voltage LDMOSFETs (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

概要

論文の詳細を見る
Accurate physical DC and AC models of 60V lateral double diffused MOSFETs (LDMOSFETs) are presented in this paper. These models are based on physical analysis considering device geometry, carrier distributions, mobility degradation effect, the effect of impact ionization, and the phenomena of the electron accumulation. In DC model, we divide LDMOSFETs into two regions to obtain the physical conduction model: one is channel region and the other is drift region. The channel region model is modified BSIM3v3 model and the drift region is employed voltage dependent resistance model considering electron distributions, the depth of current path, and the depleted length in the drift region. In AC model, we focus on the electron distributions in the drift region. The model is voltage dependent capacitance model considering the electron accumulation at the gate edge and the depletion in the drift region. The modeling results are compared with measured I-V and C-V characteristics and show good agreements with the measured results of devices within 10% error.
社団法人電子情報通信学会の論文
2007-06-18