A Scalable DC Model of High Voltage LDMOSFETs
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概要
- 論文の詳細を見る
A scalable DC model of lateral double diffused MOSFETs (LDMOSFETs) is presented in this paper. This model is based on physical analysis considering device geometry, carrier distributions, mobility degradation effect, and the effect of impact ionization. In this model, we divide the LDMOSFET into two regions to obtain the physical conduction model: one is channel region and the other is drift region. The channel region model is based on the BSIM3v3 model and the drift region employs voltage dependent resistance model considering the length of depleted region in the drift region. The modeling results are compared with measured I-V characteristics and the results show good agreements with the maximum error of 10% compared to the measured results of devices.
- （社）電子情報通信学会の論文
- 2008-05-01
著者
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Kwon Oh-kyong
Division Of Electrical And Computer Engineering Hanyang University
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Nam Ki-soo
Division Of Electrical And Computer Engineering Hanyang University
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Kwag Pyong-Su
Division of Electrical and Computer Engineering, Hanyang University
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Kwag Pyong-su
Division Of Electrical And Computer Engineering Hanyang University
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Kwon Oh‐kyong
Division Of Electrical And Computer Engineering Hanyang University
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