An Accurate Drain Current Model of SOI High Voltage Lateral MOSFETs Including Self-Heating Effect

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概要

• 論文の詳細を見る

• We have developed the nonisothermal drain current model of SOI high voltage(HV) lateral MOSFETs including the self-heating effect which is caused by the heat generated in high voltage integrated circuits and by the low thermal conductance. The thermal network of high voltage lateral MOSFETs is composed of the lumped heat capacitors. lumped thermal conductors and lumped heat sources considering the physical effect of isothermal drain current and transient temperature-rate with time. The simulation results using a nonisothermal circuit model show the negative differential resistance 1-V characteristics and have good agreement with the measurements when long pulses are applied to gate of high voltage lateral MOSFETs.

• 社団法人電子情報通信学会の論文
• 2001-06-29

著者

• Kwon Oh-kyong

  Div.of Electrical And Computer Engineering Hanyang University

• Lee Mueng-Ryul

  Div.of Electrical and Computer Engineering, Hanyang University

• Lee M‐r

  Division Of Electrical And Computer Engineering Hanyang University

• Lee Mueng-ryul

  Div.of Electrical And Computer Engineering Hanyang University

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• An Accurate Drain Current Model of SOI High Voltage Lateral MOSFETs Including Self-Heating Effect
• High Performance 600V LDMOSFET with a Polysilicon and a Metal Field Plate for SOI High Voltage Integrated Circuits
• An Accurate Drain Current Model of SOI High Voltage Lateral MOSFETs Including Self-Heating Effect

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