High Performance 600V LDMOSFET with a Polysilicon and a Metal Field Plate for SOI High Voltage Integrated Circuits

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概要

• 論文の詳細を見る

• We have developed high performance 600V lateral double-diffused MOSFETs(LDMOSFETs) with dual field plates on SOI layer thickness of 0.15μm for high voltage integrated circuits(HVICs). The dual field plates of 600V SOI LDMOSFETs are formed by polysilicon gate process on 8000Å-thick field oxide and first metalization process on 2μm-thick oxide. The dual field plates increase the amount of drift region charge by fulfilling the RESURF principle, then improve the performance of the specific on-resistance. The fabricated SOI LDMOSFETs have the specific on-resistance of 62mΩcm^2 with breakdown voltage of 632V. This is the best-reported result for 600V LDMOSFETs.

• 社団法人電子情報通信学会の論文
• 2001-06-30

著者

• Kwon Oh-kyong

  Div.of Electrical And Computer Engineering Hanyang University

• Lee Mueng-Ryul

  Div.of Electrical and Computer Engineering, Hanyang University

• Lee Mueng-ryul

  Div.of Electrical And Computer Engineering Hanyang University

関連論文

• RESURF LDMOS Technologies for High Voltage Integrated Circuits
• RESURF LDMOS Technologies for High Voltage Integrated Circuits
• High Performance 600V LDMOSFET with a Polysilicon and a Metal Field Plate for SOI High Voltage Integrated Circuits
• An Accurate Drain Current Model of SOI High Voltage Lateral MOSFETs Including Self-Heating Effect
• High Performance 600V LDMOSFET with a Polysilicon and a Metal Field Plate for SOI High Voltage Integrated Circuits
• An Accurate Drain Current Model of SOI High Voltage Lateral MOSFETs Including Self-Heating Effect

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