RESURF LDMOS Technologies for High Voltage Integrated Circuits
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概要
- 論文の詳細を見る
The RESURF LDMOS devices have been most widely used in high voltage integrated circuits but they have a problem of channel-length variation because of their non-self-align process. This paper describes the RESURF technologies ranging from 20V to 250V, EDMOSFETs for elimination of the channel-length variation and the methods for enhancing the SOA performance. In addition, this paper also describes the display driver LSIs which have uniform output characteristics and have been developed using the 20V LDMOSFETs and the EDMOSFETs.
- 社団法人電子情報通信学会の論文
- 2001-06-30
著者
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Kwon Oh-kyong
Department Of Electrical Engineering Hanyang University
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Kwon Oh-kyong
Div.of Electrical And Computer Engineering Hanyang University
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Kwon O‐k
Division Of Electrical And Computer Engineering Hanyang University
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Kwon Oh-keun
Semiconductor Process And Device Laboratory Dept. Of Electronic Engineering Chung-ang University
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Na Young-sun
Div.of Electrical And Computer Engineering Hanyang University
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Lee Mueng-Ryul
Div.of Electrical and Computer Engineering, Hanyang University
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Lee Mueng-ryul
Div.of Electrical And Computer Engineering Hanyang University
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