Organic Light-Emitting Diode-on-Silicon Pixel Circuit Using the Source Follower Structure with Active Load for Microdisplays
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概要
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In this paper, we propose a pixel circuit immune to the electrical characteristic variation of organic light-emitting diodes (OLEDs) for organic light-emitting diode-on-silicon (OLEDoS) microdisplays with a 0.4 inch video graphics array (VGA) resolution and a 6-bit gray scale. The proposed pixel circuit is implemented using five p-channel metal oxide semiconductor field-effect transistors (MOSFETs) and one storage capacitor. The proposed pixel circuit has a source follower with a diode-connected transistor as an active load for improving the immunity against the electrical characteristic variation of OLEDs. The deviation in the measured emission current ranges from $-0.165$ to 0.212 least significant bit (LSB) among 11 samples while the anode voltage of OLED is 0 V. Also, the deviation in the measured emission current ranges from $-0.262$ to 0.272 LSB in pixel samples, while the anode voltage of OLED varies from 0 to 2.5 V owing to the electrical characteristic variation of OLEDs.
- 2011-03-25
著者
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Kwon Oh-kyong
Department Of Electoronic Engineering Hanyang University
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Kwon Oh-Kyong
Department of Electronic Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Kwak Bong-Choon
Department of Electronic Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Lim Han-Sin
Department of Electronic Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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