Cho Heung-jae | Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.

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著作論文

Suppressed Boron Penetration in p^+ poly-Si/Al_2O_3/Si Metal-Oxide-Semiconductor System by Remote Plasma Nitridation of Al_2O_3 Surface
Characteristics of TaO_xN_y Gate Dielectric with Improved Thermal Stability
Physical and Electrical Characteristics of Poly-Si/ZrO_2/SiO_2/Si MOS Structures
Diffusion Barrier Characteristics of TiSix/TiN for Tungsten Dual Poly Gate in DRAM
Degradation of Nitride/W/WN_x/Poly-Si Gate Stack by Post-Thermal Processes
Effect of Post Thermal Processes on Nitride/W/WN_x/poly-Si Gate Stack
Impact of In Situ NH_3 Preannealing on Sub-100nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation
Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide
Dependence of gate interfacial resistance on the formation of insulative boron-nitride for p-channel metal-oxide-semiconductor field-effect transistor in tungsten dual polygate memory devices (Special issue: Solid state devices and materials)
Gate oxide reliability characterization of tungsten polymetal gate with low-contact-resistive WSix/WN diffusion barrier in memory devices
Roles of Ti, TiN, and WN as an interdiffusion barrier for tungsten dual polygate stack in memory devices (Special issue: Solid state devices and materials)
Effect of Gate Oxide Thickness Uniformity on the Characteristics of Three-dimensional Transistors
TaO_xN_y Gate Dielectric with Improved Thermal Stability

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