YANG Jun-Mo | Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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概要
関連著者
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YANG Jun-Mo
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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CHO Heung-Jae
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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PARK Dae-Gyu
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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LIM Kwan-Yong
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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KO Jung-Kyu
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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YEO In-Seok
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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PARK Jin
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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YOON Hee-Koo
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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Cho Heung-jae
Memory R&d Division Hynix Semiconductor Inc.
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Kim Jin-woong
Memory R&d Division Hynix Semiconductor Inc.
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Yeo In-seok
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Yeo In-seok
Advanced Process Team Memory R&d Div. Hynix Semiconductor Inc.
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Yeo In-seok
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Cho Heung-jae
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Ko Jung-kyu
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Lim Kwan-yong
Memory R&d Division Hynix Semiconductor Inc.
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Yoon Hee-koo
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Park Dae-gyu
Memory R&d Division Hynix Semiconductor. Inc.
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Park Dae-gyu
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Park J
Memory R&d Center Hyundai Electronics Industries Co. Ltd.
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Yang Jun-mo
Memory R&d Division Hynix Semiconductor Inc.
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KIM Joong-Jung
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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CHOI Il-Sang
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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KIM Jae-Young
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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Park Jin
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Yeo I‐s
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Park Jin
R&d Division Lg Semicon. Co. Ltd.
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Choi Il-sang
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Park J
Hyundai Microelectronics Co. Ltd. Chungju Kor
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Lim Kwan-yong
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Cho Hag-ju
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd
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Yang Jun-Mo
Advanced Technology Center for Information Electronic Materials and Components, National Nanofab Center, Daejoen 305-806, Korea
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Hong Soon-Ku
Department of Advanced Materials Engineering, Chungnam National University, Daejeon 305-764, Korea
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Hong Soon-Ku
Department of Material Science and Engineering, Chungnam National University, Daejoen 305-764, Korea
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Hwang Wook-Jung
Advanced Technology Center for Information Electronic Materials and Components, National Nanofab Center, Daejoen 305-806, Korea
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Kang Il-Suk
Advanced Technology Center for Information Electronic Materials and Components, National Nanofab Center, Daejoen 305-806, Korea
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Ahn Chi
Advanced Technology Center for Information Electronic Materials and Components, National Nanofab Center, Daejoen 305-806, Korea
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Seo Hyeon-Sang
Advanced Technology Center for Information Electronic Materials and Components, National Nanofab Center, Daejoen 305-806, Korea
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Kim Ga-Hee
Advanced Technology Center for Information Electronic Materials and Components, National Nanofab Center, Daejoen 305-806, Korea
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HONG Soon-Ku
Department of Advanced Materials Engineering, Chungnam National University
著作論文
- Physical and Electrical Characteristics of Poly-Si/ZrO_2/SiO_2/Si MOS Structures
- Dynamic Characteristics of Metal-Induced Laterally Crystallized Polycrystalline Silicon Thin-Film Transistor Devices and Circuits Fabricated with Asymmetric Precrystallization