Park J | Memory R&d Center Hyundai Electronics Industries Co. Ltd.

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著作論文

A Study on Therlnal Stability of CoSi_2 Elnploying Novel Flne-Gralned PolycryStalline Silicon/CoSi_2/Si (001) System : Semiconductors
Suppressed Boron Penetration in p^+ poly-Si/Al_2O_3/Si Metal-Oxide-Semiconductor System by Remote Plasma Nitridation of Al_2O_3 Surface
New Drive Line Shape for Reflective Magnetooptic Spatial Light Modulator
Magnetooptic Spatial Light Modulator for Volumetric Digital Recording System
Magneto-optic spatial light modulator based on magneto-photonic crystal
One-Dimensional Magnetophotonic Crystal Spatial Light Modulator
Physical and Electrical Characteristics of Poly-Si/ZrO_2/SiO_2/Si MOS Structures
Highly Reliable Dual Gate Oxide Fabrication by Reducing Wet Etching Time and Re-Oxidation for Sub-Quarter Micron CMOS Devices
SiC/SiO_2 Structure Formed at 〜200℃ by Heat Treatment at 950℃ Having Excellent Electrical Characteristics
SiC/SiO_2 Structure Formed at -200℃ with Excellent Electrical Characteristics
Effect of Wet Etched Thickness and Reoxidation on Reliability of Dual Gate Oxide for Sub-Quarter Micron Complementary Metal-Oxide-Semiconductor Devices
Characterization of Amorphous Phases of Ge_2Sb_2Te_5 Phase-Change Optical Recording Material on Their Crystallization Behavior
Degradation of Ta_2O_5 Gate Dielectric by TiCl_4-Based Chemically Vapor Deposited TiN Film in W/TiN/Ta_2O_5/Si System
W as a Bit Line Interconnection in Capacitor-Over-Bit-line (COB) Structured Dynamic Random Access Memory (DRAM) and Feasible Diffusion Barrier Layer
Suppression of Jitter Bump GeSbTe Phase-Change Optical Disk
Degradation of Ta_2O_5 Gate Dielectric by TiCl_4-Based Chemically Vapor Deposited TiN Film in W/TiN/Ta_2O_5/Si System
Improvement of Gate Oxide Reliability for Direct Tungsten-Gate Using Denudation of WN_x
Improvement of Reverse Leakage Current by Fluorine Implantation in n^+/p Shallow Junctions Diffused from a Cobalt Silicide Layer
Suppression of Arsenic Loss by Phosphorus Co-Implantation in n^+/p Shallow Junction Diffused from a CoSi_2 Layer
Reduction of junction leakage current and sheet resistance using C-49 TiSi_2 as a diffusion source
Reduction of junction leakage current and sheet resistance using C-49 TiSi_2 as a diffusion source
Formation of Low-Resistivity Gate Electrode Suitable for the Future Devices Using Clustered DCS-Wsix Polycide
Structural Evaluation of CVD WSix and Its Effect on Polycide Line Resistance
W as a BIT Line Interconnection in COB Structured DRAM and Feasible Diffusion Barrier Layer
A New Efficient Error Correctible Modulation Code for Holographic Data Storage

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