Lee Joo | Memory R&d Division Hyundai Electronics Industries Co.
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概要
関連著者
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Lee Joo
Memory R&d Division Hyundai Electronics Industries Co.
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Lee J
Department Of Electronic Engineering National Chiao Tung University
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Park Jin
Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Lee Joo
Memory R&d Division Hynix Semiconductor Inc.
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ROH Jae
Memory Research and Development Division, HYUNDAI Electronics Industries Co., Ltd.
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Park J
Memory R&d Center Hyundai Electronics Industries Co. Ltd.
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Park J
Hyundai Electronics Industries Co. Ltd. Kyoungki‐do Kor
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Park Jin-won
Giga Process Team Lg Semicon Co. Ltd.
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Han Chang
Memory R&d Division Hyundai Electronics Industries Co.
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Park Jin
R&d Division Lg Semicon. Co. Ltd.
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Kim J
Changwon National Univ. Kyungnam Kor
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Lee W‐j
Sejong Univ. Seoul Kor
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Lee J
National Nano Device Lab. Hsinchu Twn
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PARK Ji-Soo
Memory R&D Center, Hyundai Electronics Industries Co.,Ltd.
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Park Jin
Semiconductor R&d Goldstar Electron Co. Ltd.
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LEE JooWan
Memory R&D Division, Hyundai Electronics Industries Co., Ltd.
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Roh Jae
Memory R & D Division Hynix Semiconductor Inc.
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Lee W‐j
Department Of Advanced Materials Engineering Sejong University
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Kim Jun
Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Kim Byoung
Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Kim Jong
Institute Of Basic Science Changwon National University
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Han Suk
Flat Panel Display Laboratory Orion Electric Company
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Park Ji-soo
Memory R&d Center Hyundai Electronics Industries Co. Ltd.
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HAN Chang
Memory R&D Center, Hyundai Electronics Industries Co.,Ltd.
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Lee Jam
Department Of Computational Nanoelectronics National Nano Device Laboratories
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Roh J
Hyundai Electronics Ind. Co. Ltd. Ichon‐si Kor
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Park Jin
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Kim Yeong-Cheol
Department of Materials Engineering, Korea University of Technology and Education
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PARK Jin
R&D Division, LG Semicon. Co., Ltd.
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Kim Yeong-cheol
Department Of Materials Engineering Korea University Of Technology And Education
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Kim Kyong-min
Memory R & D Division Hyundai Electronics Industries Co. Ltd.
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Lee Jong
Memory Business Division Samsung Electronics Inc.
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LEI Tan
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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Park J
Hyundai Microelectronics Co. Ltd. Chungju Kor
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Park J‐s
Hanyang Univ. Kyunggido Kor
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Roh Jae
Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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KIM Byoung
Memory R&D Division, Hyundai Electronics Industries, Co., Ltd.
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HAN Sang
Memory R&D Division, Hyundai Electronics Industries, Co., Ltd.
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LEE Won-Jun
Memory R&D Division, Hyundai Electronics Industries, Co., Ltd.
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KIM Jun
Memory R&D Division, Hyundai Electronics Industries, Co., Ltd.
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PARK Jin-Won
Memory R&D Division, Hyundai Electronics Industries, Co., Ltd.
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LEE Chung-Len
Department of Electronic Engineering, National Chiao Tung University
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Lee Chung-len
Department Of Electronic Engineering National Chiao Tung University
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LEE Won-Jun
R&D Division, Hyundai MicroElectronics
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KIM Byoung
R&D Division, Hyundai MicroElectronics
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HAN Sang
R&D Division, Hyundai MicroElectronics
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LEE Joo
R&D Division, Hyundai MicroElectronics
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KIM Jun
R&D Division, Hyundai MicroElectronics
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SONG Han-Sang
Memory Research and Development Division, Hynix Semiconductor Inc.
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Song Han-sang
Memory R & D Division Hynix Semiconductor Inc.
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Lei Tan
Department Of Electronic Engineering National Chiao Tung University
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JEONG Kyung-Cheol
Memory R & D Division, Hynix Semiconductor Inc.
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Jeong Kyung-cheol
Memory R & D Division Hynix Semiconductor Inc.
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Park Jin-won
Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Kim Kyong-min
Memory R & D Division Hynix Semiconductor Inc.
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Kim Yeong-cheol
Department Of Energy Materials Chemical Engineering Korea University Of Technology And Education
著作論文
- Degradation of Ta_2O_5 Gate Dielectric by TiCl_4-Based Chemically Vapor Deposited TiN Film in W/TiN/Ta_2O_5/Si System
- Study of Bump Formation in Integrated Chemical Vapor Deposition-Physical Vapor Deposition Aluminum Filling Process
- Degradation of Ta_2O_5 Gate Dielectric by TiCl_4-Based Chemically Vapor Deposited TiN Film in W/TiN/Ta_2O_5/Si System
- Thin Oxides Grown on Disilane-Based Polysilicon(Semiconductors)
- Integration of Chemical Vapor Deposition Aluminum and Physical Vapor Deposition Aluminum for Aluminum Plug Process of Sub-Quarter Micron Devices
- The Property of Ta_2O_5 On Chemical Vapor Deposited Ru Film Fabricated using Tris (2,4-Octanedionato)ruthenium for Application to Dynamic Random Access Memory Capacitor : Semiconductors