ROH Jae | Memory Research and Development Division, HYUNDAI Electronics Industries Co., Ltd.
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概要
関連著者
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ROH Jae
Memory Research and Development Division, HYUNDAI Electronics Industries Co., Ltd.
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Roh Jae
Memory R & D Division Hynix Semiconductor Inc.
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Yeom S
Memory Research And Development Division Hynix Semiconductor Inc.
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Yeom S
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Yeom Seung
Memory Research And Development Division Hynix Semiconductor Inc.
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KWEON Soon
Memory Research and Development Division, Hynix Semiconductor Inc.
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Yeom Seung
Memory R&d Division Hynix Semiconductor Inc.
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Kweon Soon
Memory Research And Development Division Hynix Semiconductor Inc.
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Kweon Soon
Memory R&d Division Hynix Semiconductor Inc.
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YEOM Seung
Memory Research and Development Division, HYUNDAI Electronics Industries Co., Ltd.
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Roh J‐s
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Roh J
Memory Research And Development Division Hynix Semiconductor Inc.
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Roh Jae-sung
Advanced Process-capacitor Memory Research & Development Division Hyundai Electronics Industries
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Roh J‐s
Memory Research And Development Division Hynix Semiconductor Inc.
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Yang Woo
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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Kim Nam
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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Roh Jae-sung
Memory R&d Division Hynix Semiconductor Inc.
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Kim N
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Kim Nam
Memory Research And Development Division Hynix Semiconductor Inc.
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Kim Nam
Memory Product And Technology Division Samsung Electronics
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Yang W
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Kim Nam
Memory R&d Division Hynix Semiconductor Inc.
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Yang Woo
Memory Research And Development Division Hynix Semiconductor Inc.
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CHOI Eun
Memory Research and Development Division, Hynix Semiconductor Inc.
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Choi Eun
Memory R&d Division Hynix Semiconductor Inc.
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Choi E
Memory Research And Development Division Hynix Semiconductor Inc.
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KWEON Soon
Department of Materials Science and Engineering, Korea Advanced Institute of Science andTechnology
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Choi S
Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology
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Choi Si
Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology
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Kweon Soon
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Kusung-dong, Yusung-gu, Taejon 305-701, Korea
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CHOI Si
Department of Materials Science and Engineering, Korea Advanced Institute of Science andTechnology
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Lee Joo
Memory R&d Division Hyundai Electronics Industries Co.
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Lee Joo
Memory R&d Division Hynix Semiconductor Inc.
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Lee J
Department Of Electronic Engineering National Chiao Tung University
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Roh J
Hyundai Electronics Ind. Co. Ltd. Ichon‐si Kor
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Roh Jae
Memory R&d Division Hynix Semiconductor Inc.
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Park Jin-won
Giga Process Team Lg Semicon Co. Ltd.
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Park Jin
Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Kim Yeong-Cheol
Department of Materials Engineering, Korea University of Technology and Education
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Kim Yeong-cheol
Department Of Materials Engineering Korea University Of Technology And Education
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Park Young
Feram Team Memory R&d Division Hynix Semiconductor Incorporated
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Park Y
Hynix Semiconductor Incorporated Kyoungki‐do Kor
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PARK Young
Memory Research and Development Division, Hynix Semiconductor Inc.
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CHOl Si
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology
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YEON Seng
Memory R&D Division, Hyundai Electrontics Industries Co., Ltd.
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Kim J
Changwon National Univ. Kyungnam Kor
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Lee W‐j
Sejong Univ. Seoul Kor
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Kim Kyong-min
Memory R & D Division Hyundai Electronics Industries Co. Ltd.
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Lee Jong
Memory Business Division Samsung Electronics Inc.
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Roh Jae
Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Park Young
Memory Research And Development Division Hynix Semiconductor Inc.
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KIM Byoung
Memory R&D Division, Hyundai Electronics Industries, Co., Ltd.
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HAN Sang
Memory R&D Division, Hyundai Electronics Industries, Co., Ltd.
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LEE Won-Jun
Memory R&D Division, Hyundai Electronics Industries, Co., Ltd.
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KIM Jun
Memory R&D Division, Hyundai Electronics Industries, Co., Ltd.
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PARK Jin-Won
Memory R&D Division, Hyundai Electronics Industries, Co., Ltd.
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YANG Woo
Electronics and Telecommunications Research Institute (ETRI)
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SONG Han-Sang
Memory Research and Development Division, Hynix Semiconductor Inc.
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Song Han-sang
Memory R & D Division Hynix Semiconductor Inc.
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JEONG Kyung-Cheol
Memory R & D Division, Hynix Semiconductor Inc.
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Jeong Kyung-cheol
Memory R & D Division Hynix Semiconductor Inc.
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Lee W‐j
Department Of Advanced Materials Engineering Sejong University
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Kim Jun
Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Kim Byoung
Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Kim Jong
Institute Of Basic Science Changwon National University
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Yang Woo
Electronics And Telecommunications Research Institute
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Han Suk
Flat Panel Display Laboratory Orion Electric Company
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Park Jin-won
Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Kim Kyong-min
Memory R & D Division Hynix Semiconductor Inc.
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Kim Yeong-cheol
Department Of Energy Materials Chemical Engineering Korea University Of Technology And Education
著作論文
- Platinum Hillocks in Pt/Ti Film Stacks Deposited on Thermally Oxidized Si Substrate : Semiconductors
- Ohmic Contact Properties of Tungsten Plug and Ferroelectric Properties of (Bi,La)_4Ti_3O_ Thin Film in Stacked Capacitor Structure
- Electrical Properties of Bi_LaxTi_3O_ Ferroelectric Thin Films Prepared by Metalorganic Decomposition Method
- Stacked Pt/SrBi_2Ta_Nb_xO_9/Pt/IrO_x/Ir Capacitor on Poly Plug(Semiconductors)
- Effects of Bottom Electrodes (Pt and IrO_2) on Physical and Electrical Properties of Bi_La_xTi_3O_Thin Film : Electrical Properties of Condensed Matter
- Effects of Bottom Electrodes (Pt and IrO_2) on Physical and Electrical Properties of Bi_La_xTi_3O_ (BLT) Thin Film
- Thermal Stability and Electrical Properties of SrBi_2TaNb_XO_9/IrO_x Capacitors With Pt Top Electrode : Semiconductors
- Effects of Crystallization Annealing Sequence for SrBi_2Ta_2O_9(SBT)Film on Pt/SBT Interface Morphology and Electrical Properties of Ferroelectric Capacitor
- Study of Bump Formation in Integrated Chemical Vapor Deposition-Physical Vapor Deposition Aluminum Filling Process
- Thickness Effects on Physical and Ferroelectric Properties of Bi_La_Ti_3O_ (BLT) Films with c-axis-Preferred and Random Orientations
- The Property of Ta_2O_5 On Chemical Vapor Deposited Ru Film Fabricated using Tris (2,4-Octanedionato)ruthenium for Application to Dynamic Random Access Memory Capacitor : Semiconductors