Jang S‐a | Memory R&d Division Hynix Semiconductor Inc.
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概要
関連著者
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Jang S‐a
Memory R&d Division Hynix Semiconductor Inc.
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Jang Se-aug
R&d Division Hynix Semiconductor Inc.
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Yang Hong-seon
Memory R&d Division Hynix Semiconductor Inc.
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Jang Se-aug
Memory R&d Division Hyundai Electronics Ind. Co. Ltd.
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Cho Heung-jae
Memory R&d Division Hynix Semiconductor Inc.
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Cho Heung-jae
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Lim Kwan-yong
Memory R&d Division Hynix Semiconductor Inc.
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Kim Yang
Department Of Material Science And Engineering Kaist
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Kim Jin-woong
Memory R&d Division Hynix Semiconductor Inc.
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Jang Se-aug
Memory R&d Division Hynix Semiconductor Inc.
著作論文
- Diffusion Barrier Characteristics of TiSix/TiN for Tungsten Dual Poly Gate in DRAM
- Degradation of Nitride/W/WN_x/Poly-Si Gate Stack by Post-Thermal Processes
- Effect of Post Thermal Processes on Nitride/W/WN_x/poly-Si Gate Stack
- Impact of In Situ NH_3 Preannealing on Sub-100nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation
- Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide
- Effect of Gate Oxide Thickness Uniformity on the Characteristics of Three-dimensional Transistors
- The incorporation effect of thin Al_2O_3 layers on ZrO_2-Al_2O_3 nanolaminates in the composite oxide-high-K-oxide stack for the floating gate flash memory devices
- ED2000-50 / SDM2000-50 Oxidation Behaviors of Ti-Polycide Gate Stack During Gate Re-oxidation
- ED2000-50 / SDM2000-50 Oxidation Behaviors of Ti-Polycide Gate Stack During Gate Re-oxidation
- Evaluation of Double Spacer Local Oxidation of Silicon (LOCOS) Isolation Process for Sub-Quarter Micron Design Rule